|
FDC610PZ Datasheet, PDF (1/6 Pages) Fairchild Semiconductor – P-Channel PowerTrench® MOSFET | |||
|
FDC610PZ
P-Channel PowerTrench® MOSFET
â30V, â4.9A, 42mâ¦
Features
 Max rDS(on) = 42m⦠at VGS = â10V, ID = â4.9A
 Max rDS(on) = 75m⦠at VGS = â4.5V, ID = â3.7A
 Low gate charge (17nC typical).
 High performance trench technology for extremely low rDS(on).
 SuperSOTTM â6 package: small footprint (72% smaller than
standard SOâ8) low profile (1mm thick).
 RoHS Compliant
August 2007
tm
General Description
This P-Channel MOSFET is produced using Fairchild
Semiconductorâs advanced PowerTrench® process that has
been especially tailored to minimize the on-state resistance and
yet maintain low gate charge for superior switching performance.
These devices are well suited for battery power applications:
load switching and power management, battery charging
circuits, and DC/DC conversion.
Application
 DC - DC Conversion
S
D
D
Pin 1
G
D
D
SuperSOTTM -6
D1
D2
G 33
6D
5D
4S
MOSFET Maximum Ratings TA= 25°C unless otherwise noted
Symbol
VDS
VGS
ID
PD
TJ, TSTG
Parameter
Drain to Source Voltage
Gate to Source Voltage
Drain Current -Continuous
-Pulsed
Power Dissipation
Power Dissipation
Operating and Storage Junction Temperature Range
Thermal Characteristics
(Note 1a)
(Note 1a)
(Note 1b)
Ratings
â30
±25
â4.9
â20
1.6
0.8
â55 to +150
Units
V
V
A
W
°C
RθJA
RθJA
Thermal Resistance, Junction to Ambient
Thermal Resistance, Junction to Ambient
Package Marking and Ordering Information
(Note 1a)
78
(Note 1b)
156
°C/W
Device Marking
.610Z
Device
FDC610PZ
Package
SSOT6
Reel Size
7ââ
Tape Width
8mm
Quantity
3000units
©2007 Fairchild Semiconductor Corporation
1
FDC610PZ Rev.B
www.fairchildsemi.com
|
▷ |