FDC606P Datasheet, PDF (1/5 Pages) Fairchild Semiconductor – P-Channel 1.8V Specified PowerTrench MOSFET

December 2001
FDC606P
P-Channel 1.8V Specified PowerTrench^ MOSFET
General Description
This P-Channel 1.8V specified MOSFET uses
Fairchild’s low voltage PowerTrench process. It has
been optimized for battery power management
applications.
Applications
• Battery management
• Load switch
• Battery protection
Features
• –6 A, –12 V.
RDS(ON) = 26 mΩ @ VGS = –4.5 V
RDS(ON) = 35 mΩ @ VGS = –2.5 V
RDS(ON) = 53 mΩ @ VGS = –1.8 V
• Fast switching speed
• High performance trench technology for extremely
low RDS(ON)
S
D
D
SuperSOT ^TM-6
G
DD
1
6
2
5
3
4
Absolute Maximum Ratings TA=25^oC unless otherwise noted
Symbol
VDSS
VGSS
ID
Parameter
Drain-Source Voltage
Gate-Source Voltage
Drain Current – Continuous
– Pulsed
(Note 1a)
PD
Maximum Power Dissipation
(Note 1a)
(Note 1b)
TJ, TSTG
Operating and Storage Junction Temperature Range
Thermal Characteristics
RθJA
Thermal Resistance, Junction-to-Ambient
RθJC
Thermal Resistance, Junction-to-Case
(Note 1a)
(Note 1)
Package Marking and Ordering Information
Device Marking
Device
Reel Size
.606
FDC606P
7’’
Ratings
–12
±8
–6
–20
1.6
0.8
–55 to +150
78
30
Tape width
8mm
Units
V
V
A
W
°C
°C/W
°C/W
Quantity
3000 units
2001 Fairchild Semiconductor Corporation
FDC606P Rev E (W)