FDC602P Datasheet, PDF (1/6 Pages) Fairchild Semiconductor – P-Channel 2.5V Specified PowerTrench MOSFET

November 1999
ADVANCE INFORMATION
FDC602P
P-Channel 2.5V Specified PowerTrench^ MOSFET
General Description
This P-Channel 2.5V specified MOSFET uses a rugged
gate version of Fairchild’s advanced PowerTrench
process. It has been optimized for power management
applications with a wide range of gate drive voltage
(2.5V – 12V).
Applications
•= Battery management
•= Load switch
•= Battery protection
Features
•= –5.5 A, –12 V
RDS(ON) = 0.033 Ω @ VGS = –4.5 V
RDS(ON) = 0.052 Ω @ VGS = –2.5 V
•= Fast switching speed.
•= High performance trench technology for extremely
low RDS(ON) .
S
D
D
SuperSOT ^TM-6
G
D
D
1
6
2
5
3
4
Absolute Maximum Ratings TA=25^oC unless otherwise noted
Symbol
VDSS
VGSS
ID
Parameter
Drain-Source Voltage
Gate-Source Voltage
Drain Current – Continuous
– Pulsed
(Note 1a)
PD
Maximum Power Dissipation
(Note 1a)
(Note 1b)
TJ, TSTG
Operating and Storage Junction Temperature Range
Thermal Characteristics
RθJA
Thermal Resistance, Junction-to-Ambient
RθJC
Thermal Resistance, Junction-to-Case
(Note 1a)
(Note 1)
Package Marking and Ordering Information
Device Marking
Device
Reel Size
.602
FDC602P
7’’
Ratings
–12
±12
-5.5
-30
1.6
0.8
-55 to +150
78
30
Tape width
8mm
Units
V
V
A
W
°C
°C/W
°C/W
Quantity
3000 units
1999 Fairchild Semiconductor Corporation
FDC602P Rev A