FDC6020C Datasheet, PDF (1/9 Pages) Fairchild Semiconductor – Complementary PowerTrench MOSFET

November 2003
FDC6020C
Complementary PowerTrench^ MOSFET
General Description
These N & P-Channel MOSFETs are produced using
Fairchild Semiconductor’s advanced PowerTrench
process that has been especially tailored to minimize
on-state resistance and yet maintain superior
switching performance.
These devices are well suited for low voltage and
battery powered applications where low in-line power
loss and fast switching are required.
Applications
• DC/DC converter
• Load switch
• Motor Driving
Features
• Q1 –4.2 A, –20V. R_DS(ON) = 55 mΩ @ V_GS = – 4.5 V
R_DS(ON) = 82 mΩ @ V_GS = – 2.5 V
• Q2 5.9 A, 20V. R_DS(ON) = 27 mΩ @ V_GS = 4.5 V
R_DS(ON) = 39 mΩ @ V_GS = 2.5 V
• Low gate charge
• High performance trench technology for extremely
low R_DS(ON).
• FLMP SSOT-6 package: Enhanced thermal
performance in industry-standard package size
Absolute Maximum Ratings T_A = 25°C unless otherwise noted
Symbol
Parameter
V_DSS
V_GSS
I_D
P_D
Drain-Source Voltage
Gate-Source Voltage
Drain Current - Continuous
- Pulsed
Power Dissipation for Dual Operation
Power Dissipation for single Operation
(Note 1a)
(Note 1a)
(Note 1a)
(Note 1b)
T_J, T_STG
Operating and Storage Junction Temperature Range
Thermal Characteristics
R_θJA
Thermal Resistance, Junction-to-Ambient
R_θJC
Thermal Resistance, Junction-to-Case
(Note 1a)
(Note 1a)
Package Marking and Ordering Information
Device Marking
Device
Reel Size
.020
FDC6020C
7’’
2003 Fairchild Semiconductor Corporation
Bottom Drain Contact
Q2 (N)
4
3
5
2
6
1
Q1 (P)
Bottom Drain Contact
Q1
Q2
–20
20
±12
±12
–4.2
5.9
–20
20
1.6
1.8
1.2
–55 to +150
Units
V
V
A
W
°C
68
°C/W
1
Tape width
8mm
Quantity
3000 units
FDC6020C Rev B(W)