FDC6000NZ Datasheet, PDF (1/7 Pages) Fairchild Semiconductor – Dual N-Channel 2.5V Specified PowerTrench MOSFET

June 2004
FDC6000NZ
Dual N-Channel 2.5V Specified PowerTrench^ MOSFET
General Description
This N-Channel 2.5V specified MOSFET is a rugged
gate version of Fairchild's Semiconductor’s advanced
PowerTrench process. It has been optimized for power
management applications with a wide range of gate
drive voltage (2.5V – 12V). Packaged in FLMP SSOT-6,
the R_DS(ON) and thermal properties of the device are
optimized for battery power management applications.
Applications
• Battery management/Charger Application
• Load switch
Features
• 6.5 A, 20 V R_DS(ON) = 20 mΩ @ V_GS = 4.5 V
R_DS(ON) = 28 mΩ @ V_GS = 2.5 V
• ESD protection diode (note 3)
• High performance trench technology for extremely
low R_DS(ON)
• FLMP SSOT-6 package: Enhanced thermal
performance in industry-standard package size
S2
S1
G1
SuperSOT-6^TM FLMP
G2
S2
S1
MOSFET Maximum Ratings T_A=25^oC unless otherwise noted
Symbol
V_DSS
V_GSS
I_D
Parameter
Drain-Source Voltage
Gate-Source Voltage
Drain Current – Continuous
– Pulsed
(Note 1a)
P_D
Power Dissipation for Dual Operation
(Note 1a)
Power Dissipation for Single Operation
(Note 1a)
(Note 1b)
T_J, T_STG
Operating and Storage Junction Temperature Range
Thermal Characteristics
R_θJA
Thermal Resistance, Junction-to-Ambient
R_θJc
Thermal Resistance, Junction-to-Case
(Note 1a)
(Note 1a)
Package Marking and Ordering Information
Device Marking
Device
Reel Size
.0NZ
FDC6000NZ
7’’
2004 Fairchild Semiconductor Corporation
Bottom Drain Contact
4
3
5
2
6
1
Bottom Drain Contact
Ratings
20
±12
7.3
20
1.6
1.8
1.2
–55 to +150
68
1
Tape width
8mm
Units
V
V
A
W
°C
°C/W
Quantity
3000 units
FDC6000NZ Rev E1 (W)