FDC5614P Datasheet, PDF (1/5 Pages) Fairchild Semiconductor – 60V P-Channel Logic Level PowerTrench MOSFET

February 2002
FDC5614P
60V P-Channel Logic Level PowerTrench^ MOSFET
General Description
This 60V P-Channel MOSFET uses Fairchild’s high
voltage PowerTrench process. It has been optimized for
power management applications.
Applications
• DC-DC converters
• Load switch
• Power management
Features
• –3 A, –60 V.
RDS(ON) = 0.105 Ω @ VGS = –10 V
RDS(ON) = 0.135 Ω @ VGS = –4.5 V
• Fast switching speed
• High performance trench technology for extremely
low RDS(ON)
S
D
D
SuperSOT ^TM-6
G
DD
1
6
2
5
3
4
Absolute Maximum Ratings TA=25^oC unless otherwise noted
Symbol
VDSS
VGSS
ID
Parameter
Drain-Source Voltage
Gate-Source Voltage
Drain Current – Continuous
– Pulsed
(Note 1a)
PD
Maximum Power Dissipation
(Note 1a)
(Note 1b)
TJ, TSTG
Operating and Storage Junction Temperature Range
Thermal Characteristics
RθJA
Thermal Resistance, Junction-to-Ambient
RθJC
Thermal Resistance, Junction-to-Case
(Note 1a)
(Note 1)
Package Marking and Ordering Information
Device Marking
Device
Reel Size
.564
FDC5614P
7’’
Ratings
–60
±20
–3
–20
1.6
0.8
–55 to +150
78
30
Tape width
8mm
Units
V
V
A
W
°C
°C/W
°C/W
Quantity
3000 units
2002 Fairchild Semiconductor Corporation
FDC5614P Rev C1 (W)