FDC5612 Datasheet, PDF (1/8 Pages) Fairchild Semiconductor – 60V N-Channel PowerTrenchTM MOSFET

May 1999
FDC5612
60V N-Channel PowerTrench^TM MOSFET
General Description
This N-Channel MOSFET has been designed
specifically to improve the overall efficiency of DC/DC
converters using either synchronous or conventional
switching PWM controllers.
These MOSFETs feature faster switching and lower gate
charge than other MOSFETs with comparable R_DS(ON)
specifications.
The result is a MOSFET that is easy and safer to drive
(even at very high frequencies), and DC/DC power supply
designs with higher overall efficiency.
Features
• 4.3 A, 60 V. R_DS(ON) = 0.055 W @ V_GS = 10 V
R_DS(ON) = 0.064 W @ V_GS = 6 V.
• Low gate charge (12.5nC typical).
• Fast switching speed.
• High performance trench technology for extremely
low R_DS(ON).
• SuperSOT^TM-6 package: small footprint (72% smaller
than standard SO-8); low profile (1mm thick).
S
D
D
SuperSOT^TM -6
G
D
D
1
6
2
5
3
4
Absolute Maximum Ratings ^TA ^{= 25°C unless otherwise noted}
Symbol
Parameter
VDSS
VGSS
ID
PD
TJ, Tstg
Drain-Source Voltage
Gate-Source Voltage
Drain Current - Continuous
(Note 1a)
Drain Current - Pulsed
Power Dissipation for Single Operation
(Note 1a)
(Note 1b)
Operating and Storage Junction Temperature Range
Ratings
60
±²⁰
4.3
20
1.6
0.8
-55 to +150
Units
V
V
A
W
°^C
Thermal Characteristics
R_θJA
Thermal Resistance, Junction-to-Ambient
(Note 1a)
78
R_θJC
Thermal Resistance, Junction-to-Case
(Note 1)
30
°^C/W
°^C/W
Package Outlines and Ordering Information
Device Marking
Device
Reel Size
.612
FDC5612
7’’
Tape Width
8mm
Quantity
3000 units
ã 1999 Fairchild Semiconductor Corporation
FDC5612 Rev. C