FDC365P Datasheet, PDF (1/6 Pages) Fairchild Semiconductor – P-Channel PowerTrench MOSFET RoHS Compliant

FDC365P
P-Channel PowerTrench^® MOSFET
-35V, -4.3A, 55mΩ
Features
„ Max r_DS(on) = 55mΩ at V_GS = -10V, I_D = -4.2A
„ Max r_DS(on) = 80mΩ at V_GS = -4.5V, I_D = -3.2A
„ RoHS Compliant
November 2007
tm
General Description
This P-Channel MOSFET has been produced using Fairchild
Semiconductor’s proprietary PowerTrench^® technology to
deliver low r_DS(on) and optimized Bvdss capability to offer
superior performance benefit in the applications.
Applications
„ Inverter
„ Power Supplies
S
D
D
Pin 1
G
D
D
SuperSOT^TM -6
D1
D2
G3
6D
5D
4S
MOSFET Maximum Ratings T_C = 25°C unless otherwise noted
Symbol
V_DS
V_GS
I_D
P_D
T_J, T_STG
Parameter
Drain to Source Voltage
Gate to Source Voltage
-Continuous
-Pulsed
Power Dissipation
Power Dissipation
Operating and Storage Junction Temperature Range
Thermal Characteristics
(Note 1a)
(Note 1a)
(Note 1b)
Ratings
-35
±20
-4.3
-20
1.6
0.8
-55 to +150
Units
V
V
A
W
°C
R_θJA
R_θJA
Thermal Resistance, Junction to Ambient
Thermal Resistance, Junction to Ambient
Package Marking and Ordering Information
(Note 1a)
78
(Note 1b)
156
°C/W
Device Marking
.365P
Device
FDC365P
Package
SSOT6
Reel Size
7’’
Tape Width
8mm
Quantity
3000 units
©2007 Fairchild Semiconductor Corporation
1
FDC365P Rev.C
www.fairchildsemi.com