FDC3616N Datasheet, PDF (1/7 Pages) Fairchild Semiconductor – 100V N-Channel PowerTrench MOSFET

January 2004
FDC3616N
100V N-Channel PowerTrench^ MOSFET
General Description
This N-Channel MOSFET has been designed
specifically to improve the overall efficiency of DC/DC
converters using either synchronous or conventional
switching PWM controllers. It has been optimized for
low gate charge, low R_DS(ON) and fast switching speed.
Applications
• DC/DC converter
• Load Switching
Features
• 3.7 A, 100 V.
R_DS(ON) = 70 mΩ @ V_GS = 10 V
R_DS(ON) = 80 mΩ @ V_GS = 6.0 V
• High performance trench technology for extremely
low R_DS(ON)
• Low gate charge (23nC typical)
• High power and current handling capability
• Fast switching speed.
G
S
S
S
S
S
SuperSOT-6^TM FLMP
Bottom Drain
1
2
3
Absolute Maximum Ratings T_A=25^oC unless otherwise noted
Symbol
V_DSS
V_GSS
I_D
P_D
Parameter
Drain-Source Voltage
Gate-Source Voltage
Drain Current – Continuous
– Pulsed
Maximum Power Dissipation
(Note 1a)
(Note 1a)
(Note 1b)
T_J, T_STG
Operating and Storage Junction Temperature Range
Thermal Characteristics
R_θJA
Thermal Resistance, Junction-to-Ambient
R_θJC
Thermal Resistance, Junction-to-Case
(Note 1a)
(Note 1b)
Package Marking and Ordering Information
Device Marking
Device
Reel Size
.616
FDC3616N
7’’
Ratings
100
± 20
3.7
20
2
1.1
−55 to +150
60
111
0.5
Tape width
8mm
6
5
4
Units
V
V
A
W
°C
°C/W
Quantity
3000 units
2004 Fairchild Semiconductor Corporation
FDC3616N Rev C1 (W)