FDC3601N Datasheet, PDF (1/5 Pages) Fairchild Semiconductor – Dual N-Channel 100V Specified PowerTrench MOSFET

August 2001
FDC3601N
Dual N-Channel 100V Specified PowerTrench^MOSFET
General Description
These N-Channel 100V specified MOSFETs are
produced using Fairchild Semiconductor's advanced
PowerTrench process that has been especially tailored
to minimize on-state resistance and yet maintain low
gate charge for superior switching performance.
These devices have been designed to offer exceptional
power dissipation in a very small footprint for
applications where the bigger more expensive SO-8
and TSSOP-8 packages are impractical.
Applications
• Load switch
• Battery protection
• Power management
Features
• 1.0 A, 100 V. RDS(ON)= 500 mΩ @ VGS = 10 V
RDS(ON)= 550 mΩ @ VGS = 6.0 V
• Low gate charge (3.7nC typical)
• Fast switching speed.
• High performance trench technology for extremely
low R DS(ON) .
• SuperSOT^TM-6 package: small footprint 72%
(smaller than standard SO-8); low profile (1mm thick).
D2
S1
D1
SuperSOT ^TM -6
G2
S2
G1
4
3
5
2
6
1
Absolute Maximum Ratings TA=25^oC unless otherwise noted
Symbol
VDSS
VGSS
ID
Parameter
Drain-Source Voltage
Gate-Source Voltage
Drain Current – Continuous
– Pulsed
(Note 1a)
PD
Power Dissipation for Single Operation
(Note 1a)
(Note 1b)
(Note 1c)
TJ, TSTG
Operating and Storage Junction Temperature Range
Thermal Characteristics
RθJA
Thermal Resistance, Junction-to-Ambient
RθJC
Thermal Resistance, Junction-to-Case
(Note 1a)
(Note 1)
Package Marking and Ordering Information
Device Marking
Device
Reel Size
.601
FDC3601N
7’’
Ratings
100
±20
1.0
4.0
0.96
0.9
0.7
−55 to +150
130
60
Tape width
8mm
Units
V
V
A
W
°C
°C/W
°C/W
Quantity
3000 units
2001 Fairchild Semiconductor Corporation
FDC3601N Rev C(W)