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FDC3512 Datasheet, PDF (1/5 Pages) Fairchild Semiconductor – 80V N-Channel PowerTrench MOSFET | |||
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February 2002
FDC3512
80V N-Channel PowerTrenchï MOSFET
General Description
This N-Channel MOSFET has been designed
specifically to improve the overall efficiency of DC/DC
converters using either synchronous or conventional
switching PWM controllers. It has been optimized for
low gate charge, low RDS(ON) and fast switching speed.
Applications
⢠DC/DC converter
Features
⢠3.0 A, 80 V
RDS(ON) = 77 m⦠@ VGS = 10 V
RDS(ON) = 88 m⦠@ VGS = 6 V
⢠High performance trench technology for extremely
low RDS(ON)
⢠Low gate charge (13nC typ)
⢠High power and current handling capability
⢠Fast switching speed
S
D
D
SuperSOT TM-6
G
DD
1
6
2
5
3
4
Absolute Maximum Ratings TA=25oC unless otherwise noted
Symbol
Parameter
VDSS
VGSS
ID
PD
Drain-Source Voltage
Gate-Source Voltage
Drain Current â Continuous
â Pulsed
Maximum Power Dissipation
(Note 1a)
(Note 1a)
(Note 1b)
TJ, TSTG
Operating and Storage Junction Temperature Range
Thermal Characteristics
RθJA
Thermal Resistance, Junction-to-Ambient
RθJC
Thermal Resistance, Junction-to-Case
(Note 1a)
(Note 1)
Package Marking and Ordering Information
Device Marking
Device
Reel Size
.352
FDC3512
7ââ
Ratings
80
± 20
3.0
20
1.6
0.8
â55 to +150
78
30
Tape width
8mm
Units
V
V
A
W
°C
°C/W
°C/W
Quantity
3000 units
ï2002 Fairchild Semiconductor Corporation
FDC3512 Rev B2 (W)
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