FDC2612 Datasheet, PDF (1/5 Pages) Fairchild Semiconductor – 200V N-Channel PowerTrench MOSFET

February 2002
FDC2612
200V N-Channel PowerTrench^ MOSFET
General Description
This N-Channel MOSFET has been designed
specifically to improve the overall efficiency of DC/DC
converters using either synchronous or conventional
switching PWM controllers. It has been optimized for
low gate charge, low RDS(ON) and fast switching speed.
Applications
• DC/DC converter
Features
• 1.1 A, 200 V. RDS(ON) = 725 mΩ @ VGS = 10 V
• High performance trench technology for extremely
low RDS(ON)
• High power and current handling capability
• Fast switching speed
• Low gate charge (8nC typical)
S
D
D
SuperSOT ^TM-6
G
DD
1
6
2
5
3
4
Absolute Maximum Ratings TA=25^oC unless otherwise noted
Symbol
VDSS
VGSS
ID
Parameter
Drain-Source Voltage
Gate-Source Voltage
Drain Current – Continuous
– Pulsed
(Note 1a)
PD
Maximum Power Dissipation
(Note 1a)
(Note 1b)
TJ, TSTG
Operating and Storage Junction Temperature Range
Thermal Characteristics
RθJA
Thermal Resistance, Junction-to-Ambient
RθJC
Thermal Resistance, Junction-to-Case
(Note 1a)
(Note 1)
Package Marking and Ordering Information
Device Marking
Device
Reel Size
.262
FDC2612
7’’
Ratings
200
± 20
1.1
4
1.6
0.8
−55 to +150
78
30
Tape width
8mm
Units
V
V
A
W
°C
°C/W
°C/W
Quantity
3000 units
2002 Fairchild Semiconductor Corporation
FDC2612 Rev B3 (W)