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FDBL86210_F085 Datasheet, PDF (1/6 Pages) Fairchild Semiconductor – N-Channel Power Trench® MOSFET | |||
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FDBL86210_F085
N-Channel Power Trench® MOSFET
150V, 169A, 6.3mΩ
January 2014
Features
 Typ rDS(on) = 5mΩ at VGS = 10V, ID = 80A
 Typ Qg(tot) = 70nC at VGS = 10V, ID = 80A
 UIS Capability
 RoHS Compliant
 Qualified to AEC Q101
Applications
 Automotive Engine Control
 Powertrain Management
 Solenoid and Motor Drivers
 Integrated Starter/alternator
 Primary Switch for 12V Systems
D
G
S
For current package drawing, please refer to the Fairchild
website at www.fairchildsemi.com/packaging
MOSFET Maximum Ratings TJ = 25°C unless otherwise noted
Symbol
Parameter
VDSS
VGS
ID
Drain to Source Voltage
Gate to Source Voltage
Drain Current - Continuous (VGS=10) (Note 1)
Pulsed Drain Current
EAS
Single Pulse Avalanche Energy
Power Dissipation
PD
Derate above 25oC
TJ, TSTG Operating and Storage Temperature
RθJC
Thermal Resistance Junction to Case
RθJA
Maximum Thermal Resistance Junction to Ambient
TC = 25°C
TC = 25°C
(Note 2)
(Note 3)
Ratings
150
±20
169
See Figure4
502
500
3.3
-55 to + 175
0.3
43
Units
V
V
A
mJ
W
W/oC
oC
oC/W
oC/W
Package Marking and Ordering Information
Device Marking
FDBL86210
Device
FDBL86210_F085
Package
MO-299A
Reel Size
-
Tape Width
-
Quantity
-
Notes:
1: Current is limited by junction temperature.
2: Starting TJ = 25°C, L = 0.24mH, IAS = 64A, VDD = 100V during inductor charging and VDD = 0V during time in avalanche
3: RθJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder
mounting surface
presented here is
obfatsheeddoraninmpoiunnst.inRgθoJnCais1giuna2rpaandteoefd2boyzdceospigpnerw. hile
RθJAis
determined
by
the
user's
board
design.
The maximum rating
©2013 Fairchild Semiconductor Corporation
1
FDBL86210_F085 Rev. C1
www.fairchildsemi.com
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