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FDB8896_F085 Datasheet, PDF (1/11 Pages) Fairchild Semiconductor – N-Channel PowerTrench® MOSFET | |||
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FDB8896_F085
N-Channel PowerTrench® MOSFET
30V, 93A, 5.7mΩ
General Description
This N-Channel MOSFET has been designed specifically to
improve the overall efficiency of DC/DC converters using
either synchronous or conventional switching PWM
controllers. It has been optimized for low gate charge, low
rDS(ON) and fast switching speed.
Applications
⢠DC/DC converters
July 2010
Features
⢠rDS(ON) = 5.7mΩ, VGS = 10V, ID = 35A
⢠rDS(ON) = 6.8mΩ, VGS = 4.5V, ID = 35A
⢠High performance trench technology for extremely low
rDS(ON)
⢠Low gate charge
⢠High power and current handling capability
⢠Qualified to AEC Q101
⢠RoHS Compliant
D
GATE
SOURCE
G
TO-263AB DRAIN
FDB SERIES (FLANGE)
MOSFET Maximum Ratings TC = 25°C unless otherwise noted
Symbol
VDSS
VGS
ID
EAS
PD
TJ, TSTG
Parameter
Drain to Source Voltage
Gate to Source Voltage
Drain Current
Continuous (TC = 25oC, VGS = 10V) (Note 1)
Continuous (TC = 25oC, VGS = 4.5V) (Note 1)
Continuous (Tamb = 25oC, VGS = 10V, with RθJA = 43oC/W)
Pulsed
Single Pulse Avalanche Energy (Note 2)
Power dissipation
Derate above 25oC
Operating and Storage Temperature
Thermal Characteristics
RθJC
RθJA
RθJA
Thermal Resistance Junction to Case TO-263
Thermal Resistance Junction to Ambient TO-263 ( Note 3)
Thermal Resistance Junction to Ambient TO-263, 1in2 copper pad area
S
S
Ratings
30
±20
93
85
19
Figure 4
74
80
0.53
-55 to 175
1.88
62
43
Units
V
V
A
A
A
A
mJ
W
W/oC
oC
oC/W
oC/W
oC/W
Package Marking and Ordering Information
Device Marking
FDB8896
Device
FDB8896_F085
Package
TO-263AB
Reel Size
330mm
Tape Width
24mm
Quantity
800 units
©2010 Fairchild Semiconductor Corporation
FDB8896_F085 Rev. A
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