FDB8896 Datasheet, PDF (1/11 Pages) Fairchild Semiconductor – N-Channel PowerTrench MOSFET 30V, 93A, 5.7 m ohm

November 2004
FDB8896
N-Channel PowerTrench^® MOSFET
30V, 93A, 5.7mΩ
General Description
This N-Channel MOSFET has been designed specifically to
improve the overall efficiency of DC/DC converters using
either synchronous or conventional switching PWM
controllers. It has been optimized for low gate charge, low
r_DS(ON) and fast switching speed.
Applications
• DC/DC converters
Features
• r_DS(ON) = 5.7mΩ, V_GS = 10V, I_D = 35A
• r_DS(ON) = 6.8mΩ, V_GS = 4.5V, I_D = 35A
• High performance trench technology for extremely low
r_DS(ON)
• Low gate charge
• High power and current handling capability
D
GATE
G
SOURCE
DRAIN
TO-263AB ^(FLANGE)
FDB SERIES
MOSFET Maximum Ratings T_C = 25°C unless otherwise noted
Symbol
V_DSS
V_GS
I_D
E_AS
P_D
T_J, T_STG
Parameter
Drain to Source Voltage
Gate to Source Voltage
Drain Current
Continuous (T_C = 25^oC, V_GS = 10V) (Note 1)
Continuous (T_C = 25^oC, V_GS = 4.5V) (Note 1)
Continuous (T_amb = 25^oC, V_GS = 10V, with R_θJA = 43^oC/W)
Pulsed
Single Pulse Avalanche Energy (Note 2)
Power dissipation
Derate above 25^oC
Operating and Storage Temperature
S
Ratings
30
±20
93
85
19
Figure 4
74
80
0.53
-55 to 175
Units
V
V
A
A
A
A
mJ
W
W/^oC
o_C
Thermal Characteristics
R_θJC
Thermal Resistance Junction to Case TO-263
1.88
R_θJA
Thermal Resistance Junction to Ambient TO-263 ( Note 3)
62
R_θJA
Thermal Resistance Junction to Ambient TO-263, 1in² copper pad area
43
o_C/W
o_C/W
o_C/W
Package Marking and Ordering Information
Device Marking
FDB8896
FDB8896
Device
FDB8896
FDB8896_NL (Note 4)
Package
TO-263AB
TO-263AB
Reel Size
330mm
330mm
Tape Width
24mm
24mm
Quantity
800 units
800 units
©2004 Fairchild Semiconductor Corporation
FDB8896 Rev. B1