FDB8880 Datasheet, PDF (1/11 Pages) Fairchild Semiconductor – N-Channel PowerTrench MOSFET

February 2005
FDP8880 / FDB8880
N-Channel PowerTrench^® MOSFET
30V, 54A, 11.6mΩ
Features
r_DS(ON) = 14.5mΩ, V_GS = 4.5V, I_D = 40A
r_DS(ON) = 11.6mΩ, V_GS = 10V, I_D = 40A
High performance trench technology for extremely low
r_DS(ON)
Low gate charge
General Description
This N-Channel MOSFET has been designed specifically to
improve the overall efficiency of DC/DC converters using
either synchronous or conventional switching PWM
controllers. It has been optimized for low gate charge, low
r_DS(ON) and fast switching speed.
High power and current handling capability
Applications
DC/DC converters
GATE
DRAIN
(FLANGE)
SOURCE
TO-263AB
FDB SERIES
DRAIN
(FLANGE)
D
SOURCE
DRAIN
GATE
G
TO-220AB
S
FDP SERIES
©2005 Fairchild Semiconductor Corporation
1
FDP8880 / FDB8880 Rev. A
www.fairchildsemicom