FDB8870 Datasheet, PDF (1/11 Pages) Fairchild Semiconductor – N-Channel PowerTrench MOSFET 30V, 160A, 3.9mW

September 2004
FDB8870
N-Channel PowerTrench^® MOSFET
30V, 160A, 3.9m Ω
General Description
This N-Channel MOSFET has been designed specifically to
improve the overall efficiency of DC/DC converters using
either synchronous or conventional switching PWM
controllers. It has been optimized for low gate charge, low
r_DS(ON) and fast switching speed.
Applications
• DC/DC converters
Features
• r_DS(ON) = 3.9mΩ, V_GS = 10 V, I_D = 35A
• r_DS(ON) = 4.4mΩ, V_GS = 4. 5V, I_D = 35A
• High performance trench technology for extremely low
r_DS(ON)
• Low gate charge
• High power and current handling capability
D
GATE
SOURCE
TO-263AB
FDB SERIES
DRAIN
(FLANGE)
G
S
MOSFET Maximum Ratings T_C = 25°C unless otherwise noted
Symbol
V_DSS
V_GS
I_D
Parameter
Drain to Source Voltage
Gate to Source Voltage
Drain Current
Continuous (T_C = 25^oC, V _GS = 10V) (Note 1)
Continuous (T_C = 25^oC, V _GS = 4.5V) (Note 1)
Continuous (T_amb = 25^oC, V_GS = 10 V, with R_θJA = 43^oC/W)
Pulsed
E_AS
Single Pulse Avalanche Energy (Note 2)
Power dissipation
P_D
Derate above 25^oC
T_J, T _STG
Operating and Storage Temperature
Ratings
30
±20
160
150
23
Figure 4
300
160
1.07
-55 to 175
Units
V
V
A
A
A
A
mJ
W
W/^oC
o_C
Thermal Characteristics
R_{θ JC}
R_{θ JA}
R_{θ JA}
Thermal Resistance Junction to Case TO-263
Thermal Resistance Junction to Ambient TO-263 ( Note 3)
Thermal Resistance Junction to Ambient TO-263, 1in ² copper pad area
0.94
62
43
o_C/W
o_C/W
o_C/W
Package Marking and Ordering Information
Device Marking
FDB8870
Device
FDB8870
Package
TO-263AB
Reel Size
330mm
Tape Width
24mm
Quantity
800 units
©2004 Fairchild Semiconductor Corporation
FDB8870 Rev. A1