FDB86360_F085 Datasheet, PDF (1/6 Pages) Fairchild Semiconductor – N-Channel Power Trench® MOSFET

FDB86360_F085
N-Channel Power Trench^® MOSFET
80V, 110A, 1.8mΩ
January 2014
D
D
Features
„ Typ r_DS(on) = 1.5mΩ at V_GS = 10V, I_D = 80A
„ Typ Q_g(tot) = 207nC at V_GS = 10V, I_D = 80A
„ UIS Capability
„ RoHS Compliant
„ Qualified to AEC Q101
Applications
„ Automotive Engine Control
„ Powertrain Management
„ Solenoid and Motor Drivers
„ Integrated Starter/alternator
„ Primary Switch for 12V Systems
G
GS
TO-263
S
FDB SERIES
For current package drawing, please refer to the Fairchild
website at www.fairchildsemi.com/packaging
MOSFET Maximum Ratings T_J = 25°C unless otherwise noted
Symbol
Parameter
V_DSS
V_GS
I_D
Drain to Source Voltage
Gate to Source Voltage
Drain Current - Continuous (V_GS=10) (Note 1)
Pulsed Drain Current
E_AS
Single Pulse Avalanche Energy
Power Dissipation
P_D
Derate above 25^oC
T_J, T_STG Operating and Storage Temperature
R_θJC
Thermal Resistance Junction to Case
R_θJA
Maximum Thermal Resistance Junction to Ambient
T_C = 25°C
T_C = 25°C
(Note 2)
(Note 3)
Ratings
80
±20
110
See Figure4
1167
333
2.22
-55 to + 175
0.45
43
Units
V
V
A
mJ
W
W/^oC
o_C
o_C/W
o_C/W
Package Marking and Ordering Information
Device Marking
FDB86360
Device
FDB86360_F085
Package
D2-PAK(TO-263)
Reel Size
330mm
Tape Width
24mm
Quantity
800 units
Notes:
1: Current is limited by bondwire configuration.
2: Starting T_J = 25°C, L = 0.57mH, I_AS = 64A, V_DD = 80V during inductor charging and V_DD = 0V during time in avalanche
3: R_θJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder
mounting surface
presented here is
obfatsheeddoraninmpoiunnst.inR_{gθoJnCais1giuna2}rpaandteoefd2boyzdceospigpnerw. hile
R_θJAis
determined
by
the
user's
board
design.
The maximum rating
©2013 Fairchild Semiconductor Corporation
1
FDB86360_F085 Rev. C2
www.fairchildsemi.com