FDB86102LZ Datasheet, PDF (1/6 Pages) Fairchild Semiconductor – N-Channel PowerTrench® MOSFET 100 V, 30 A, 24 mΩ

FDB86102LZ
N-Channel PowerTrench^® MOSFET
100 V, 30 A, 24 mΩ
May 2011
Features
General Description
„ Max r_DS(on) = 24 mΩ at V_GS = 10 V, I_D = 8.3 A
„ Max r_DS(on) = 35 mΩ at V_GS = 4.5 V, I_D = 6.8 A
„ HBM ESD protection level > 6 kV typical (Note 4)
„ Very low Qg and Qgd compared to competing trench
technologies
„ Fast switching speed
„ 100% UIL Tested
„ RoHS Compliant
This N-Channel MOSFET is produced using Fairchild
Semiconductor’s advanced PowerTrench^® process that has
been especially tailored to minimize the on-state resistance and
switching loss. G-S zener has been added to enhance ESD
voltage level.
Applications
„ DC-DC conversion
„ Inverter
„ Synchronous Rectifier
D
D
G
S
TO-263AB
FDB Series
G
S
MOSFET Maximum Ratings T_A = 25 °C unless otherwise noted
Symbol
V_DS
V_GS
I_D
E_AS
P_D
T_J, T_STG
Parameter
Drain to Source Voltage
Gate to Source Voltage
Drain Current -Continuous(Package limited)
TC = 25 °C
-Continuous (Silicon limited)
TC = 25 °C
-Continuous
TA = 25 °C (Note 1a)
-Pulsed
Single Pulse Avalanche Energy
(Note 3)
Power Dissipation
T_A = 25 °C
Power Dissipation
T_A = 25 °C
Operating and Storage Junction Temperature Range
(Note 1a)
(Note 1b)
Thermal Characteristics
Ratings
100
±20
30
40
8.3
50
121
3.1
2
-55 to +150
Units
V
V
A
mJ
W
°C
R_θJC
R_θJA
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
Package Marking and Ordering Information
(Note 1)
1.9
(Note 1a)
40
°C/W
Device Marking
FDB86102LZ
Device
FDB86102LZ
Package
TO-263AB
Reel Size
330mm
Tape Width
24 mm
Quantity
800 units
©2011 Fairchild Semiconductor Corporation
1
FDB86102LZ Rev.C1
www.fairchildsemi.com