FDB8453LZ Datasheet, PDF (1/6 Pages) Fairchild Semiconductor – N-Channel PowerTrench® MOSFET

FDB8453LZ
N-Channel PowerTrench^® MOSFET
40V, 50A, 7.0mΩ
Features
„ Max r_DS(on) = 7.0mΩ at V_GS = 10V, I_D = 17.6A
„ Max r_DS(on) = 9.0mΩ at V_GS = 4.5V, I_D = 14.9A
„ HBM ESD protection level of 7.6kV typical (note 4)
„ Fast Switching
„ RoHS Compliant
August 2007
tm
General Description
This N-Channel MOSFET is produced using Fairchild
Semiconductor’s advanced PowerTrench^® process that has
been especially tailored to minimize the on-state resistance and
switching loss. G-S zener has been added to enhance ESD
voltage level.
Applications
„ Inverter
„ Power Supplies
D
D
G
S
TO-263AB
FDB Series
G
S
MOSFET Maximum Ratings T_C = 25°C unless otherwise noted
Symbol
V_DS
V_GS
I_D
E_AS
P_D
T_J, T_STG
Parameter
Drain to Source Voltage
Gate to Source Voltage
Drain Current -Continuous (Package limited)
-Continuous (Silicon limited)
-Continuous
-Pulsed
T_C = 25°C
T_C = 25°C
T_A = 25°C
Single Pulse Avalanche Energy
Power Dissipation
T_C = 25°C
Power Dissipation
T_A = 25°C
Operating and Storage Junction Temperature Range
Thermal Characteristics
(Note 1a)
(Note 3)
(Note 1a)
Ratings
40
±20
50
74
16.1
100
253
66
3.1
-55 to +150
Units
V
V
A
mJ
W
°C
R_θJC
R_θJA
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
Package Marking and Ordering Information
1.88
(Note 1a)
40
°C/W
Device Marking
FDB8453LZ
Device
FDB8453LZ
Package
TO-263AB
Reel Size
330mm
Tape Width
24mm
Quantity
800 units
©2007 Fairchild Semiconductor Corporation
1
FDB8453LZ Rev.C1
www.fairchildsemi.com