FDB8447L Datasheet, PDF (1/6 Pages) Fairchild Semiconductor – 40V N-Channel PowerTrench MOSFET

February 2007
FDB8447L
40V N-Channel PowerTrench^® MOSFET
40V, 50A, 8.5mΩ
Features
General Description
„ Max r_DS(on) = 8.5mΩ at V_GS = 10V, I_D = 14A
„ Max r_DS(on) = 11mΩ at V_GS = 4.5V, I_D = 11A
„ Fast Switching
„ RoHS Compliant
This N-Channel MOSFET has been produced using Fairchild
Semiconductor’s proprietary PowerTrench^® technology to
deliver low r_DS(on) and optimized BV_DSS capability to offer
superior performance benefit in the application.
Application
„ Inverter
„ Power Supplies
D
D
G
S
TO-263AB
FDB Series
G
S
MOSFET Maximum Ratings T_C = 25°C unless otherwise noted
Symbol
V_DS
V_GS
I_D
E_AS
P_D
T_J, T_STG
Parameter
Drain to Source Voltage
Gate to Source Voltage
Drain Current -Continuous (Package limited)
-Continuous (Silicon limited)
-Continuous
-Pulsed
T_C= 25°C
T_C= 25°C
T_A= 25°C
Drain-Source Avalanche Energy
Power Dissipation
Power Dissipation
T_C= 25°C
Operating and Storage Junction Temperature Range
Thermal Characteristics
(Note 1)
(Note 1a)
(Note 3)
(Note 1a)
Ratings
40
±20
50
66
15
100
153
60
3.1
–55 to +150
Units
V
V
A
mJ
W
°C
R_θJC
R_θJA
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
Package Marking and Ordering Information
(Note 1)
2.1
(Note 1a)
40
°C/W
Device Marking
FDB8447L
Device
FDB8447L
Package
TO-263AB
Reel Size
330mm
Tape Width
24mm
Quantity
800 units
©2007 Fairchild Semiconductor Corporation
1
FDB8447L Rev.C
www.fairchildsemi.com