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FDB42AN15_F085 Datasheet, PDF (1/6 Pages) Fairchild Semiconductor – N-Channel Power Trench® MOSFET | |||
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FDB42AN15A0_F085
N-Channel Power Trench® MOSFET
150V, 35A, 42mΩ
Features
 Typ rDS(on) = 30mΩ at VGS = 10V, ID = 12A
 Typ Qg(tot) = 78nC at VGS = 10V, ID = 12A
 UIS Capability
 RoHS Compliant
 Qualified to AEC Q101
Applications
 Automotive Engine Control
 Powertrain Management
 Solenoid and Motor Drivers
 Integrated Starter/alternator
 Primary Switch for 12V Systems
D
G
GS
TO-263
FDB SERIES
June 2013
D
S
MOSFET Maximum Ratings TJ = 25°C unless otherwise noted
Symbol
Parameter
VDSS
VGS
ID
Drain to Source Voltage
Gate to Source Voltage
Drain Current - Continuous (VGS=10) (Note 1)
Pulsed Drain Current
EAS
Single Pulse Avalanche Energy
Power Dissipation
PD
Derate above 25oC
TJ, TSTG Operating and Storage Temperature
RθJC
Thermal Resistance Junction to Case
RθJA
Maximum Thermal Resistance Junction to Ambient
TC = 25°C
TC = 25°C
(Note 2)
(Note 3)
Ratings
150
±20
35
See Figure4
78
150
1.0
-55 to + 175
1.0
43
Units
V
V
A
mJ
W
W/oC
oC
oC/W
oC/W
Package Marking and Ordering Information
Device Marking
Device
Package
FDB42AN15A0 FDB42AN15A0_F085 D2-PAK(TO-263)
Reel Size
330mm
Tape Width
24mm
Quantity
800 units
Notes:
1: Current is limited by bondwire configuration.
2: Starting TJ = 25°C, L = 0.2mH, IAS = 28A, VDD = 100V during inductor charging and VDD = 0V during time in avalanche
3: RθJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder
mounting surface
presented here is
obfatsheeddoraninmpoiunnst.inRgθoJnCais1giuna2rpaandteoefd2boyzdceospigpnerw. hile
RθJAis
determined
by
the
user's
board
design.
The maximum rating
©2013 Fairchild Semiconductor Corporation
1
FDB42AN15A0_F085 Rev. C1
www.fairchildsemi.com
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