FDB38N30U Datasheet, PDF (1/8 Pages) Fairchild Semiconductor – N-Channel UniFETTM Ultra FRFETTM MOSFET

FDB38N30U
N-Channel UniFET^TM Ultra FRFET^TM MOSFET
300 V, 38 A, 120 mΩ
November 2013
Features
• R_DS(on) = 120 mΩ (Max.) @ V_GS = 10 V, I_D = 19 A
• Low Gate Charge (Typ. 56 nC)
• Low C_rss (Typ. 55 pF)
• 100% Avalanche Tested
• RoHS Compliant
Applications
• Uninterruptible Power Supply
• LCD/LED/PDP TV
• AC-DC Power Supply
Description
UniFET^TM MOSFET is Fairchild Semiconductor’s high voltage
MOSFET family based on planar stripe and DMOS technology.
This MOSFET is tailored to reduce on-state resistance, and to
provide better switching performance and higher avalanche
energy strength. UniFET Ultra FRFET^TM MOSFET has much
superior body diode reverse recovery performance. Its trr is less
than 50nsec and the reverse dv/dt immunity is 20V/nsec while
normal planar MOSFETs have over 200nsec and 4.5V/nsec
respectively. Therefore UniFET Ultra FRFET MOSFET can
remove additional component and improve system reliability in
certain applications that require performance improvement of the
MOSFET’s body diode. This device family is suitable for
switching power converter applications such as power factor
correction (PFC), flat panel display (FPD) TV power, ATX and
electronic lamp ballasts.
D
D
G
S
D²-PAK
G
S
MOSFET Maximum Ratings T_C = 25^oC unless otherwise noted.
Symbol
V_DSS
V_GSS
I_D
I_DM
E_AS
I_AR
E_AR
dv/dt
P_D
T_J, T_STG
T_L
Parameter
Drain to Source Voltage
Gate to Source Voltage
Drain Current
Drain Current
- Continuous (T_C = 25^oC)
- Continuous (T_C = 100^oC)
- Pulsed
(Note 1)
Single Pulsed Avalanche Energy
(Note 2)
Avalanche Current
(Note 1)
Repetitive Avalanche Energy
(Note 1)
Peak Diode Recovery dv/dt
Power Dissipation
(T_C = 25^oC)
- Derate Above 25^oC
(Note 3)
Operating and Storage Temperature Range
Maximum Lead Temperature for Soldering, 1/8” from Case for 5 Seconds
Thermal Characteristics
Symbol
R_θJC
R_θJA
Parameter
Thermal Resistance, Junction to Case, Max.
Thermal Resistance, Junction to Ambient, Max.
FDB38N30U
300
±30
38
22.8
152
722
38
31.3
20
313
2.5
-55 to +150
300
FDB38N30U
0.4
62.5
Unit
V
V
A
A
mJ
A
mJ
V/ns
W
W/^oC
o_C
o_C
Unit
o_C/W
©2012 Fairchild Semiconductor Corporation
1
FDB38N30U Rev. C1
www.fairchildsemi.com