FDB3860 Datasheet, PDF (1/6 Pages) Fairchild Semiconductor – N-Channel PowerTrench® MOSFET 100 V, 30 A, 37 mΩ

March 2009
FDB3860
N-Channel PowerTrench^® MOSFET
100 V, 30 A, 37 mΩ
Features
„ Max r_DS(on) = 37 mΩ at V_GS = 10 V, I_D = 5.9 A
„ High performance trench technology for extremely low r_DS(on)
„ 100% UIL tested
„ RoHS Compliant
General Description
This N-Channel MOSFET is rugged gate version of Fairchild
Semiconductor‘s advanced Power Trench^® process. This part is
tailored for low r_DS(on) and low Qg figure of merit, with avalanche
ruggedness for a wide range of switching applications.
Applications
„ DC-AC Conversion
„ Synchronous Rectifier
D
D
G
S
TO-263AB
FDB Series
G
S
MOSFET Maximum Ratings T_C = 25 °C unless otherwise noted
Symbol
V_DS
V_GS
I_D
E_AS
P_D
T_J, T_STG
Parameter
Drain to Source Voltage
Gate to Source Voltage
Drain Current -Continuous (Silicon limited)
-Continuous
-Pulsed
T_C = 25 °C
T_A = 25 °C
Single Pulse Avalanche Energy
Power Dissipation
T_C = 25 °C
Power Dissipation
T_A = 25 °C
Operating and Storage Junction Temperature Range
Thermal Characteristics
(Note 1a)
(Note 3)
(Note 1a)
Ratings
100
±20
30
6.4
60
96
71
3.1
-55 to +150
Units
V
V
A
mJ
W
°C
R_θJC
R_θJA
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
Package Marking and Ordering Information
1.75
(Note 1a)
40
°C/W
Device Marking
FDB3860
Device
FDB3860
Package
TO-263AB
Reel Size
330 mm
Tape Width
24 mm
Quantity
800 units
©2009 Fairchild Semiconductor Corporation
1
FDB3860 Rev.C
www.fairchildsemi.com