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FDB3672_09 Datasheet, PDF (1/11 Pages) Fairchild Semiconductor – N-Channel PowerTrench® MOSFET 100V, 44A, 28mΩ
FDB3672_F085
N-Channel PowerTrench® MOSFET
100V, 44A, 28mΩ
Features
• rDS(ON) = 24mΩ (Typ.), VGS = 10V, ID = 44A
• Qg(tot) = 24nC (Typ.), VGS = 10V
• Low Miller Charge
• Low QRR Body Diode
• Optimized efficiency at high frequencies
• UIS Capability (Single Pulse and Repetitive Pulse)
• Qualified to AEC Q101
• RoHS Compliant
January 2009
Applications
• DC/DC converters and Off-Line UPS
• Distributed Power Architectures and VRMs
• Primary Switch for 24V and 48V Systems
• High Voltage Synchronous Rectifier
• Direct Injection / Diesel Injection Systems
• 42V Automotive Load Control
• Electronic Valve Train Systems
Formerly developmental type 82760
DRAIN
D
(FLANGE)
GATE
SOURCE
TO-263AB
FDB SERIES
MOSFET Maximum Ratings TC = 25°C unless otherwise noted
Symbol
VDSS
VGS
ID
EAS
PD
TJ, TSTG
Parameter
Drain to Source Voltage
Gate to Source Voltage
Drain Current
Continuous (TC = 25oC, VGS = 10V)
Continuous (TC = 100oC, VGS = 10V)
Continuous (Tamb = 25oC, VGS = 10V, RθJA = 43oC/W)
Pulsed
Single Pulse Avalanche Energy (Note 1)
Power dissipation
Derate above 25oC
Operating and Storage Temperature
G
S
Ratings
100
±20
44
31
7.2
Figure 4
120
120
0.8
-55 to 175
Units
V
V
A
A
A
A
mJ
W
W/oC
oC
Thermal Characteristics
RθJC
Thermal Resistance Junction to Case TO-263
1.25
RθJA
Thermal Resistance Junction to Ambient TO-263 (Note 2)
62
RθJA
Thermal Resistance Junction to Ambient TO-263, 1in2 copper pad area
43
oC/W
oC/W
oC/W
This product has been designed to meet the extreme test conditions and environment demanded by the automotive industry. For a
copy of the requirements, see AEC Q101 at: http://www.aecouncil.com/
Reliability data can be found at: http://www.fairchildsemi.com/products/discrete/reliability/index.html.
All Fairchild Semiconductor products are manufactured, assembled and tested under ISO9000 and QS9000 quality systems
certification.
©2009 Fairchild Semiconductor Corporation
FDB3672_F085 Rev. A