FDB3652_08 Datasheet, PDF (1/11 Pages) Fairchild Semiconductor – N-Channel PowerTrench® MOSFET 100V, 61A, 16mΩ

FDB3652_F085
N-Channel PowerTrench^® MOSFET
100V, 61A, 16mΩ
Features
• r_DS(ON) = 14mΩ (Typ.), V_GS = 10V, I_D = 61A
• Q_g(tot) = 41nC (Typ.), V_GS = 10V
• Low Miller Charge
• Low Q_RR Body Diode
• UIS Capability (Single Pulse and Repetitive Pulse)
• Qualified to AEC Q101
• RoHS Compliant
Formerly developmental type 82769
October 2008
Applications
• DC/DC Converters and Off-line UPS
• Distributed Power Architectures and VRMs
• Primary Switch for 24V and 48V Systems
• High Voltage Synchronous Rectifier
• Direct Injection / Diesel Injection Systems
• 42V Automotive Load Control
• Electronic Valve Train Systems
GATE
DRAIN
(FLANGE)
D
G
SOURCE
S
TO-263AB
FDB SERIES
MOSFET Maximum Ratings T_C = 25°C unless otherwise noted
Symbol
V_DSS
V_GS
I_D
E_AS
P_D
T_J, T_STG
Parameter
Drain to Source Voltage
Gate to Source Voltage
Drain Current
Continuous (T_C = 25^oC, V_GS = 10V)
Continuous (T_C = 100^oC, V_GS = 10V)
Continuous (T_amb = 25^oC, V_GS = 10V) with R_θJA = 43^oC/W)
Pulsed
Single Pulse Avalanche Energy (Note 1)
Power dissipation
Derate above 25^oC
Operating and Storage Temperature
Ratings
100
±20
61
43
9
Figure 4
182
150
1.0
-55 to 175
Units
V
V
A
A
A
A
mJ
W
W/^oC
o_C
Thermal Characteristics
R_θJC
Thermal Resistance Junction to Case TO-263
1.0
R_θJA
Thermal Resistance Junction to Ambient TO-263
(Note 2)
62
R_θJA
Thermal Resistance Junction to Ambient TO-263, 1in² copper pad area
43
o_C/W
o_C/W
o_C/W
This product has been designed to meet the extreme test conditions and environment demanded by the automotive industry. For a
copy of the requirements, see AEC Q101 at: http://www.aecouncil.com/
Reliability data can be found at: http://www.fairchildsemi.com/products/discrete/reliability/index.html.
All Fairchild Semiconductor products are manufactured, assembled and tested under ISO9000 and QS9000 quality systems
certification.
©2008 Fairchild Semiconductor Corporation
1
FDB3652_F085 Rev. A1