FDB3502 Datasheet, PDF (1/6 Pages) Fairchild Semiconductor – N-Channel Power Trench® MOSFET 75V, 14A, 47mΩ

May 2008
FDB3502
tm
N-Channel Power Trench^® MOSFET
75V, 14A, 47mΩ
Features
General Description
„ Max r_DS(on) = 47mΩ at V_GS = 10V, I_D = 6A
„ 100% UIL Tested
„ RoHS Compliant
This N-Channel MOSFET is produced using Fairchild
Semiconductor‘s advanced Power Trench^® process that has
been especially tailored to minimize the on-state resistance and
yet maintain superior switching performance.
Application
„ Synchronous rectifier
D
D
G
S
TO-263AB
FDB Series
G
S
MOSFET Maximum Ratings T_C = 25°C unless otherwise noted
Symbol
V_DS
V_GS
I_D
E_AS
P_D
T_J, T_STG
Parameter
Drain to Source Voltage
Gate to Source Voltage
Drain Current -Continuous (Package limited)
-Continuous (Silicon limited)
-Continuous
-Pulsed
T_C = 25°C
T_C = 25°C
T_A = 25°C
Single Pulse Avalanche Energy
Power Dissipation
T_C = 25°C
Power Dissipation
T_A = 25°C
Operating and Storage Junction Temperature Range
Thermal Characteristics
(Note 1a)
(Note 3)
(Note 1a)
Ratings
75
±20
14
22
6
40
54
41
3.1
-55 to +150
Units
V
V
A
mJ
W
°C
R_θJC
R_θJA
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
Package Marking and Ordering Information
3
(Note 1a)
40
°C/W
Device Marking
FDB3502
Device
FDB3502
Package
TO-263AB
Reel Size
330 mm
Tape Width
24 mm
Quantity
800 units
©2008 Fairchild Semiconductor Corporation
1
FDB3502 Rev.C2
www.fairchildsemi.com