FDB2614 Datasheet, PDF (1/8 Pages) Fairchild Semiconductor – 200V N-Channel PowerTrench MOSFET

November 2006
FDB2614
tm
200V N-Channel PowerTrench MOSFET
General Description
This N-Channel MOSFET is produced using Fairchild Semicon-
ductor’s advanced PowerTrench process that has been espe-
cially tailored to minimize the on-state resistance and yet
maintain superior switching performance.
Description
• 62A, 200V, R_DS(on) = 22.9mΩ @V_GS = 10 V
• Fast switching speed
• Low gate charge
• High performance trench technology for extremely low R_DS(on)
• High power and current handling capability
Application
• PDP application
D
D
GS
Absolute Maximum Ratings
Symbol
Parameter
V_DS
Drain-Source Voltage
V_GS
Gate-Source Voltage
I_D
Drain Current
- Continuous (T_C = 25°C)
- Continuous (T_C = 100°C)
I_DM
Drain Current
- Pulsed
(Note 1)
E_AS
dv/dt
Single Pulsed Avalanche Energy
Peak Diode Recovery dv/dt
(Note 2)
(Note 3)
P_D
Power Dissipation (T_C = 25°C)
- Derate above 25°C
T_J, T_STG
Operating and Storage Temperature Range
T_L
Maximum Lead Temperature for Soldering Purpose,
1/8” from Case for 5 Seconds
*Drain current limited by maximum junction temperature
Thermal Characteristics
Symbol
Parameter
R_θJC
Thermal Resistance, Junction-to-Case
R_θJA*
Thermal Resistance, Junction-to-Ambient*
R_θJA
Thermal Resistance, Junction-to-Ambient
*When mounted on the minimum pad size recommended (PCB Mount)
G
S
Ratings
200
± 30
62
39.3
see Figure 9
145
4.5
260
2.1
-55 to +150
300
Min.
--
--
--
Max.
0.48
40
62.5
Unit
V
V
A
A
A
mJ
V/ns
W
W/°C
°C
°C
Unit
°C/W
°C/W
°C/W
©2006 Fairchild Semiconductor Corporation
1
FDB2614 Rev. A
www.fairchildsemi.com