FDB2552-F085 Datasheet, PDF (1/11 Pages) Fairchild Semiconductor – N-Channel PowerTrench® MOSFET 150V, 37A, 36mΩ

FDB2552_F085
N-Channel PowerTrench^® MOSFET
150V, 37A, 36mΩ
Features
• r_DS(ON) = 32mΩ (Typ.), V_GS = 10V, I_D = 16A
• Q_g(tot) = 39nC (Typ.), V_GS = 10V
• Low Miller Charge
• Low Q_RR Body Diode
• UIS Capability (Single Pulse and Repetitive Pulse)
• Qualified to AEC Q101
• RoHS Compliant
April 2012
Applications
• DC/DC Converters and Off-line UPS
• Distributed Power Architectures and VRMs
• Primary Switch for 24V and 48V Systems
• High Voltage Synchronous Rectifier
• Direct Injection / Diesel Injection Systems
• 42V Automotive Load Control
• Electronic Valve Train Systems
D
GATE
G
SOURCE
DRAIN
TO-263AB ^(FLANGE)
S
FDB SERIES
MOSFET Maximum Ratings T_C = 25°C unless otherwise noted
Symbol
V_DSS
V_GS
I_D
Parameter
Drain to Source Voltage
Gate to Source Voltage
Drain Current
Continuous (T_C = 25^oC, V_GS = 10V)
Continuous (T_C = 100^oC, V_GS = 10V)
Continuous (T_amb = 25^oC, V_GS = 10V) with R_θJA = 43^oC/W
Pulsed
E_AS
Single Pulse Avalanche Energy (Note 1)
Power dissipation
P_D
Derate above 25^oC
T_J, T_STG Operating and Storage Temperature
Thermal Characteristics
R_θJC
R_θJA
R_θJA
Thermal Resistance Junction to Case TO-220, TO-263
Thermal Resistance Junction to Ambient TO-220, TO-263 (Note 2)
Thermal Resistance Junction to Ambient TO-263, 1in² copper pad area
©2012 Fairchild Semiconductor Corporation
1
FDB2552_F085 Rev. B1
Ratings
150
±20
37
26
5
See Figure 4
390
150
1.0
-55 to 175
Units
V
V
A
A
A
A
mJ
W
W/^oC
o_C
1.0
o_C/W
62
o_C/W
43
o_C/W
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