FDB14N30 Datasheet, PDF (1/8 Pages) Fairchild Semiconductor – 300V N-Channel MOSFET

FDB14N30
300V N-Channel MOSFET
Features
• 14A, 300V, R_DS(on) = 0.29Ω @V_GS = 10 V
• Low gate charge ( typical 18 nC)
• Low C_rss ( typical 17 pF)
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability
February 2007
UniFET^TM
Description
These N-Channel enhancement mode power field effect
transistors are produced using Fairchild’s proprietary, planar
stripe, DMOS technology.
This advanced technology has been especially tailored to
minimize on-state resistance, provide superior switching
performance, and withstand high energy pulse in the avalanche
and commutation mode. These devices are well suited for high
efficient switched mode power supplies and active power factor
correction.
D
D
GS
D²-PAK
FDB Series
Absolute Maximum Ratings
Symbol
V_DSS
I_D
I_DM
V_GSS
E_AS
I_AR
E_AR
dv/dt
P_D
T_J, T_STG
T_L
Parameter
Drain-Source Voltage
Drain Current
Drain Current
- Continuous (T_C = 25°C)
- Continuous (T_C = 100°C)
- Pulsed
(Note 1)
Gate-Source voltage
Single Pulsed Avalanche Energy
(Note 2)
Avalanche Current
(Note 1)
Repetitive Avalanche Energy
(Note 1)
Peak Diode Recovery dv/dt
(Note 3)
Power Dissipation
(T_C = 25°C)
- Derate above 25°C
Operating and Storage Temperature Range
Maximum Lead Temperature for Soldering Purpose,
1/8” from Case for 5 Seconds
Thermal Characteristics
Symbol
Parameter
R_θJC
Thermal Resistance, Junction-to-Case
R_θJA*
Thermal Resistance, Junction-to-Ambient*
R_θJA
Thermal Resistance, Junction-to-Ambient
* When mounted on the minimum pad size recommended (PCB Mount)
G
S
FDB14N30
300
14
8.4
56
±30
330
14
14
4.5
140
1.12
-55 to +150
300
Min.
--
--
--
Max.
0.89
40
62.5
Unit
V
A
A
A
V
mJ
A
mJ
V/ns
W
W/°C
°C
°C
Unit
°C/W
°C/W
°C/W
©2007 Fairchild Semiconductor Corporation
1
FDB14N30 Rev. A
www.fairchildsemi.com