FDB120N10 Datasheet, PDF (1/8 Pages) Fairchild Semiconductor – N-Channel PowerTrench® MOSFET 100V, 74A, 12mΩ

June 2009
FDB120N10
tm
N-Channel PowerTrench^® MOSFET
100V, 74A, 12mΩ
Features
• R_DS(on) = 9.7mΩ ( Typ.)@ V_GS = 10V, I_D = 74A
• Fast Switching Speed
• Low Gate Charge
• High Performance Trench Technology for Extremely Low
R_DS(on)
• High Power and Current Handling Capability
• RoHS Compliant
Description
This N-Channel MOSFET is produced using Fairchild Semicon-
ductor’s advanced PowerTrench process that has been espe-
cially tailored to minimize the on-state resistance and yet
maintain superior switching performance.
Application
• DC to DC Converters / Synchronous Rectification
D
D
G
D²-PAK
GS
FDB Series
MOSFET Maximum Ratings T_C = 25^oC unless otherwise noted
Symbol
V_DSS
V_GSS
I_D
I_DM
E_AS
dv/dt
P_D
Parameter
Drain to Source Voltage
Gate to Source Voltage
Drain Current
Drain Current
- Continuous (T_C = 25^oC)
- Continuous (T_C = 100^oC)
- Pulsed
Single Pulsed Avalanche Energy
Peak Diode Recovery dv/dt
Power Dissipation
(T_C = 25^oC)
- Derate above 25^oC
T_J, T_STG
T_L
Operating and Storage Temperature Range
Maximum Lead Temperature for Soldering Purpose,
1/8” from Case for 5 Seconds
Thermal Characteristics
Symbol
R_θJC
R_θJA
Parameter
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
(Note 1)
(Note 2)
(Note 3)
S
Ratings
100
±20
74
52
296
198
5.8
170
1.14
-55 to +175
300
Ratings
0.88
62.5
Units
V
V
A
A
mJ
V/ns
W
W/^oC
o_C
o_C
Units
o_C/W
©2009 Fairchild Semiconductor Corporation
1
FDB120N10 Rev. A
www.fairchildsemi.com