FDB088N08 Datasheet, PDF (1/6 Pages) Fairchild Semiconductor – N-Channel PowerTrench® MOSFET 75V, 85A, 8.8mΩ

March 2009
FDB088N08
tm
N-Channel PowerTrench^® MOSFET
75V, 85A, 8.8mΩ
Features
• R_DS(on) = 7.3 mΩ ( Typ.)@ V_GS = 10V, I_D = 75A
• Fast Switching Speed
• Low Gate Charge
• High Performance Trench Technology for Extremely Low
R_DS(on)
• High Power and Current Handling Capability
• RoHS Compliant
Description
This N-Channel MOSFET is produced using Fairchild Semicon-
ductor’s adcanced PowerTrench process that has been espe-
cially tailored to minimize the on-state resistance and yet
maintain superior switching performance.
Application
• DC to DC Convertors / Synchronous Rectification
D
D
GS
D²-PAK
FDB Series
G
S
Absolute Maximum Ratings T_C = 25^oC unless otherwise noted*
Symbol
Parameter
FDB088N08
V_DSS
Drain to Source Voltage
75
V_GSS
Gate to Source Voltage
±20
Drain Current
- Continuous (T_C = 25^oC, Silicon Limited)
85*
I_D
- Continuous (T_C = 100^oC, Silicon Limited)
60
- Continuous (T_C = 25^oC, Package Limited)
75
I_DM
E_AS
dv/dt
P_D
Drain Current
- Pulsed
Single Pulsed Avalanche Energy
Peak Diode Recovery dv/dt
Power Dissipation
(T_C = 25^oC)
- Derate above 25^oC
(Note 1)
340
(Note 2)
309
(Note 3)
6.3
160
1.06
T_J, T_STG
Operating and Storage Temperature Range
-55 to +175
T_L
Maximum Lead Temperature for Soldering Purpose,
1/8” from Case for 5 Seconds
300
*Calculated continuous current based on maximum allowable junction temperature. Package limitation current is 75A.
Thermal Characteristics
Symbol
R_θJC
R_θJA
Parameter
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
Ratings
0.94
62.5
Units
V
V
A
A
A
A
mJ
V/ns
W
W/^oC
o_C
o_C
Units
o_C/W
©2009 Fairchild Semiconductor Corporation
1
FDB088N08 Rev. A
www.fairchildsemi.com