FDB082N15A Datasheet, PDF (1/9 Pages) Fairchild Semiconductor – N-Channel PowerTrench MOSFET

March 2013
FDB082N15A
N-Channel PowerTrench^® MOSFET
150 V, 117 A, 8.2 mΩ
Features
• R_DS(on) = 6.7 mΩ ( Typ.)@ V_GS = 10 V, I_D = 75 A
• Fast Switching Speed
• Low Gate Charge, Q_G = 64.5 nC(Typ.)
• High Performance Trench Technology for Extremely Low
R_DS(on)
• High Power and Current Handling Capability
• RoHS Compliant
Description
This N-Channel MOSFET is produced using Fairchild
Semiconductor^®’s advanced PowerTrench^® process that has
been tailored to minimize the on-state resistance while maintain-
ing superior switching performance.
Applications
• Synchronous Rectification for ATX / Server / Telecom PSU
• Battery Protection Circuit
• Motor Drives and Uninterruptible Power Supplies
• Micro Solar Inverter
D
D
G
GS
TO-263
(D²-PAK)
MOSFET Maximum Ratings T_C = 25^oC unless otherwise noted
Symbol
V_DSS
V_GSS
I_D
I_DM
E_AS
dv/dt
P_D
T_J, T_STG
T_L
Parameter
Drain to Source Voltage
Gate to Source Voltage
Drain Current
Drain Current
-Continuous (T_C = 25^oC, Silicon Limited)
-Continuous (T_C = 100^oC, Silicon Limited)
- Pulsed
(Note 1)
Single Pulsed Avalanche Energy
(Note 2)
Peak Diode Recovery dv/dt
Power Dissipation
(T_C = 25^oC)
- Derate above 25^oC
(Note 3)
Operating and Storage Temperature Range
Maximum Lead Temperature for Soldering Purpose,
1/8” from Case for 5 Seconds
Thermal Characteristics
Symbol
R_θJC
R_θJA
Parameter
Thermal Resistance, Junction to Case, Max.
Thermal Resistance, Junction to Ambient, Max.
S
FDB082N15A
150
±20
117
83
468
542
6
294
1.96
-55 to +175
300
FDB082N15A
0.51
62.5
Unit
V
V
A
A
mJ
V/ns
W
W/^oC
o_C
o_C
Unit
o_C/W
©2011 Fairchild Semiconductor Corporation
1
FDB082N15A Rev. C1
www.fairchildsemi.com