FDB075N15A_F085 Datasheet, PDF (1/6 Pages) Fairchild Semiconductor – N-Channel Power Trench® MOSFET

FDB075N15A_F085
N-Channel Power Trench^® MOSFET
150V, 110A, 7.5mΩ
Features
„ Typ r_DS(on) = 5.5mΩ at V_GS = 10V, I_D = 80A
„ Typ Q_g(tot) = 80nC at V_GS = 10V, I_D = 80A
„ UIS Capability
„ RoHS Compliant
„ Qualified to AEC Q101
Applications
„ Automotive Engine Control
„ Powertrain Management
„ Solenoid and Motor Drivers
„ Integrated Starter/alternator
„ Primary Switch for 12V Systems
D
GS
TO-263
FDB SERIES
October 2013
D
G
S
MOSFET Maximum Ratings T_J = 25°C unless otherwise noted
Symbol
Parameter
V_DSS
V_GS
I_D
Drain to Source Voltage
Gate to Source Voltage
Drain Current - Continuous (V_GS=10) (Note 1)
Pulsed Drain Current
E_AS
Single Pulse Avalanche Energy
Power Dissipation
P_D
Derate above 25^oC
T_J, T_STG Operating and Storage Temperature
R_θJC
Thermal Resistance Junction to Case
R_θJA
Maximum Thermal Resistance Junction to Ambient
T_C = 25°C
T_C = 25°C
(Note 2)
(Note 3)
Ratings
150
±20
110
See Figure4
502
333
2.22
-55 to + 175
0.45
43
Units
V
V
A
mJ
W
W/^oC
o_C
o_C/W
o_C/W
Package Marking and Ordering Information
Device Marking
Device
Package
FDB075N15A FDB075N15A_F085 D2-PAK(TO-263)
Reel Size
330mm
Tape Width
24mm
Quantity
800 units
Notes:
1: Current is limited by bondwire configuration.
2: Starting T_J = 25°C, L = 0.24mH, I_AS = 64A, V_DD = 100V during inductor charging and V_DD = 0V during time in avalanche
3: R_θJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder
mounting surface
presented here is
obfatsheeddoraninmpoiunnst.inR_{gθoJnCais1giuna2}rpaandteoefd2boyzdceospigpnerw. hile
R_θJAis
determined
by
the
user's
board
design.
The maximum rating
©2013 Fairchild Semiconductor Corporation
1
FDB075N15A_F085_F085 Rev. C3
www.fairchildsemi.com