FDB075N15A Datasheet, PDF (1/10 Pages) Fairchild Semiconductor – N-Channel PowerTrench® MOSFET

March 2013
FDP075N15A_F102 / FDB075N15A
N-Channel PowerTrench^® MOSFET
150 V, 130 A, 7.5 mΩ
Features
• R_DS(on) = 6.25 mΩ ( Typ.) @ V_GS = 10 V, I_D = 100 A
• Fast Switching
• Low Gate Charge
• High Performance Trench Technology for Extremely Low
R_DS(on)
• High Power and Current Handling Capability
• RoHS Compliant
Description
This N-Channel MOSFET is produced using Fairchild
Semiconductor^®’s advanced PowerTrench^® process that has
been tailored to minimize the on-state resistance while maintain-
ing superior switching performance.
Applications
• Synchronous Rectification for ATX / Server / Telecom PSU
• Battery Protection Circuit
• Motor Drives and Uninterruptible Power Supplies
• Micro Solar Inverter
D
D
G
D
S
TO-220
GS
D²-PAK
(TO263)
G
S
MOSFET Maximum Ratings T_C = 25^oC unless otherwise noted*
Symbol
Parameter
V_DSS
V_GSS
I_D
I_DM
E_AS
dv/dt
P_D
Drain to Source Voltage
Gate to Source Voltage
Drain Current
Drain Current
Single Pulsed Avalanche Energy
Peak Diode Recovery dv/dt
Power Dissipation
-Continuous (T_C = 25^oC)
-Continuous (T_C = 100^oC)
- Pulsed
(T_C = 25^oC)
- Derate above 25^oC
T_J, T_STG
T_L
Operating and Storage Temperature Range
Maximum Lead Temperature for Soldering Purpose,
1/8” from Case for 5 Seconds
*Package limitation current is 120A.
Thermal Characteristics
(Note 1)
(Note 2)
(Note 3)
Symbol
Parameter
R_θJC
R_θJA
Thermal Resistance, Junction to Case, Max
Thermal Resistance, Junction to Ambient (minimum pad of 2 oz copper), Max
Thermal Resistance, Junction to Ambient D2-PAK (1 in² pad of 2 oz copper), Max
FDP075N15A_F102
FDB075N15A
150
±20
130
92
522
588
6.0
333
2.22
-55 to +175
300
FDP075N15A_F102
FDB075N15A
0.45
62.5
40
Unit
V
V
A
A
mJ
V/ns
W
W/^oC
o_C
o_C
Unit
o_C/W
©2011 Fairchild Semiconductor Corporation
1
FDP075N15A_F102 / FDB075N15A Rev. C2
www.fairchildsemi.com