FDB047N10 Datasheet, PDF (1/8 Pages) Fairchild Semiconductor – N-Channel PowerTrench® MOSFET 100V, 164A, 4.7mΩ

August 2008
FDB047N10
tm
N-Channel PowerTrench^® MOSFET
100V, 164A, 4.7mΩ
Description
• R_DS(on) = 3.9mΩ ( Typ.) @ V_GS = 10V, I_D = 75A
• Fast switching speed
• Low gate charge
• High performance trench technology for extremely low R_DS(on)
• High power and current handing capability
• RoHS compliant
General Description
This N-Channel MOSFET is producedusing Fairchild Semicon-
ductor’s advance PowerTrench process that has been especially
tailored to minimize the on-state resistance and yet maintain
superior switching performance.
Application
• DC to DC converters / Synchronous Rectification
D
D
GS
D²-PAK
FDB Series
G
S
MOSFET Maximum Ratings T_C = 25^oC unless otherwise noted*
Symbol
Parameter
Ratings
V_DSS
V_GSS
I_D
Drain to Source Voltage
Gate to Source Voltage
Drain Current
-
-
-
Continuous (T_C = 25^oC, Silicon Limited)
Continuous (T_C = 100^oC, Silicon Limited)
Continuous (T_C = 25^oC, Package Limited)
100
±20
164*
116*
120
I_DM
E_AS
dv/dt
P_D
Drain Current
- Pulsed
Single Pulsed Avalanche Energy
Peak Diode Recovery dv/dt
Power Dissipation
(T_C = 25^oC)
- Derate above 25^oC
(Note 1)
(Note 2)
(Note 3)
656*
1153
4.5
375
2.5
T_J, T_STG
Operating and Storage Temperature Range
-55 to +175
T_L
Maximum Lead Temperature for Soldering Purpose,
1/8” from Case for 5 Seconds
300
*Calculated continuous current based on maximum allowable junction temperature. Package limitation current is 120A.
Thermal Characteristics
Symbol
R_θJC
R_θJA
Parameter
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
Ratings
0.4
62.5
Units
V
V
A
A
A
A
mJ
V/ns
W
W/^oC
o_C
o_C
Units
o_C/W
©2008 Fairchild Semiconductor Corporation
1
FDB047N10 Rev. A1
www.fairchildsemi.com