FDB045AN08A0 Datasheet, PDF (1/11 Pages) Fairchild Semiconductor – N-Channel UltraFET Trench MOSFET 75V, 80A, 4.5mΩ

April 2002
FDB045AN08A0
N-Channel UltraFET^® Trench MOSFET
75V, 80A, 4.5mΩ
Features
• r_DS(ON) = 3.9mΩ (Typ.), V_GS = 10V, I_D = 80A
• Q_g(tot) = 92nC (Typ.), V_GS = 10V
• Low Miller Charge
• Low Qrr Body Diode
• UIS Capability (Single Pulse and Repetitive Pulse)
• Qualified to AEC Q101
Formerly developmental type 82684
Applications
• 42V Automotive Load Control
• Starter / Alternator Systems
• Electronic Power Steering Systems
• Electronic Valve Train Systems
• DC-DC converters and Off-line UPS
• Distributed Power Architectures and VRMs
• Primary Switch for 24V and 48V systems
D
GATE
G
SOURCE
DRAIN
TO-263AB ^(FLANGE)
FDB SERIES
MOSFET Maximum Ratings T_C = 25°C unless otherwise noted
Symbol
V_DSS
V_GS
I_D
E_AS
P_D
T_J, T_STG
Parameter
Drain to Source Voltage
Gate to Source Voltage
Drain Current
Continuous (T_C < 145^oC, V_GS = 10V)
Continuous (T_amb = 25^oC, V_GS = 10V, with R_θJA = 43^oC/W)
Pulsed
Single Pulse Avalanche Energy (Note 1)
Power dissipation
Derate above 25^oC
Operating and Storage Temperature
Thermal Characteristics
R_θJC
R_θJA
R_θJA
Thermal Resistance Junction to Case TO-263
Thermal Resistance Junction to Ambient TO-263 (Note 2)
Thermal Resistance Junction to Ambient TO-263, 1in² copper pad area
S
Ratings
75
±20
80
19
Figure 4
600
310
2.0
-55 to 175
0.48
62
43
Units
V
V
A
A
A
mJ
W
W/^oC
o_C
o_C/W
o_C/W
o_C/W
This product has been designed to meet the extreme test conditions and environment demanded by the automotive industry. For a
copy of the requirements, see AEC Q101 at: http://www.aecouncil.com/
Reliability data can be found at: http://www.fairchildsemi.com/products/discrete/reliability/index.html.
All Fairchild Semiconductor products are manufactured, assembled and tested under ISO9000 and QS9000 quality systems
certification.
©2002 Fairchild Semiconductor Corporation
FDB045AN08A0 Rev. A