FDB039N06_12 Datasheet, PDF (1/8 Pages) Fairchild Semiconductor – N-Channel PowerTrench® MOSFET 60V, 174A, 3.9mΩ

May 2012
FDB039N06
N-Channel PowerTrench^® MOSFET
60V, 174A, 3.9mΩ
Features
• R_DS(on) = 2.95mΩ ( Typ.) @ V_GS = 10V, I_D = 75A
• Fast Switching Speed
• Low Gate Charge
• High Performance Trench Technology for Extremely Low
R_DS(on)
• High Power and Current Handling Capability
• RoHS Compliant
General Description
This N-Channel MOSFET is produced using Fairchild
Semiconductor’s advanced PowerTrench process that has been
especially tailored to minimize the on-state resistance and yet
maintain superior switching performance.
Application
• DC to DC convertors / Synchronous Rectification
D
D
G
GS
S
MOSFET Maximum Ratings T_C = 25^oC unless otherwise noted
Symbol
Parameter
Ratings
V_DSS
V_GSS
I_D
I_DM
E_AS
dv/dt
P_D
Drain to Source Voltage
Gate to Source Voltage
Drain Current
Drain Current
-Continuous (T_C = 25^oC, Silicion Limited)
-Continuous (T_C = 100^oC, Silicion Limited)
-Continuous (T_C = 25^oC, Package Limited)
- Pulsed
(Note 1)
Single Pulsed Avalanche Energy
(Note 2)
Peak Diode Recovery dv/dt
Power Dissipation
(T_C = 25^oC)
- Derate above 25^oC
(Note 3)
60
±20
174*
123*
120
696
872
7.0
231
1.54
T_J, T_STG
T_L
Operating and Storage Temperature Range
Maximum Lead Temperature for Soldering Purpose,
1/8” from Case for 5 Seconds
-55 to +175
300
*Calculated continuous current based on maximum allowable junction temperature. Package limitation current is 120A.
Thermal Characteristics
Symbol
R_θJC
R_θJA
Parameter
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient (minimum pad of 2 oz copper)
Thermal Resistance, Junction to Ambient (1 in² pad of 2 oz copper)
Ratings
0.65
62.5
40
Units
V
V
A
A
mJ
V/ns
W
W/^oC
o_C
o_C
Units
o_C/W
©2012 Fairchild Semiconductor Corporation
1
FDB039N06 Rev. C0
www.fairchildsemi.com