FDB031N08 Datasheet, PDF (1/8 Pages) Fairchild Semiconductor – N-Channel PowerTrench® MOSFET 75V, 235A, 3.1mΩ

July 2008
FDB031N08
tm
N-Channel PowerTrench^® MOSFET
75V, 235A, 3.1mΩ
Features
• R_DS(on) = 2.4mΩ ( Typ.)@ V_GS = 10V, I_D = 75A
• Fast switching speed
• Low gate charge
• High performance trench technology for extremely low R_DS(on)
• High power and current handling capability
• RoHS compliant
Description
This N-Channel MOSFET is produced using Fairchild Semicon-
ductor’s adcanced PowerTrench process that has been espe-
cially tailored to minimize the on-state resistance and yet
maintain superior switching performance.
Application
• DC to DC convertors / Synchronous Rectification
D
D
D²-PAK
G S FDB Series
G
S
MOSFET Maximum Ratings T_C = 25^oC unless otherwise noted*
Symbol
Parameter
FDB031N08
V_DSS
V_GSS
I_D
Drain to Source Voltage
Gate to Source Voltage
Drain Current
-
-
-
Continuous (T_C = 25^oC, Silicon Limited)
Continuous (T_C = 100^oC, Silicon Limited)
Continuous (T_C = 25^oC, Package Limited)
75
±20
235*
165*
120
I_DM
E_AS
dv/dt
P_D
Drain Current
- Pulsed
Single Pulsed Avalanche Energy
Peak Diode Recovery dv/dt
Power Dissipation
(T_C = 25^oC)
- Derate above 25^oC
(Note 1)
(Note 2)
(Note 3)
940
1995
5.5
375
2.5
T_J, T_STG
Operating and Storage Temperature Range
-55 to +175
T_L
Maximum Lead Temperature for Soldering Purpose,
1/8” from Case for 5 Seconds
300
*Calculated continuous current based on maximum allowable junction temperature. Package limitation current is 120A.
Thermal Characteristics
Symbol
R_θJC
R_θJA
Parameter
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
Ratings
0.4
62.5
Units
V
V
A
A
A
A
mJ
V/ns
W
W/^oC
o_C
o_C
Units
o_C/W
©2008 Fairchild Semiconductor Corporation
1
FDB031N08 Rev. A3
www.fairchildsemi.com