FDB024N04AL7 Datasheet, PDF (1/9 Pages) Fairchild Semiconductor – FDB024N04AL7 N-Channel PowerTrench® MOSFET

August 2010
FDB024N04AL7
N-Channel PowerTrench^® MOSFET
40V, 219A, 2.4mΩ
Features
• R_DS(on) = 2.0mΩ ( Typ.)@ V_GS = 10V, I_D = 80A
• Fast Switching Speed
• Low Gate Charge
• High Performance Trench Technology for Extremely Low
R_DS(on)
• High Power and Current Handling Capability
• RoHS Compliant
Description
This N-Channel MOSFET is produced using Fairchild
Semiconductor’s advanced PowerTrench process that has been
especially tailored to minimize the on-state resistance and yet
maintain superior switching performance.
Application
• DC to DC Convertors / Synchronous Rectification
D (Pin4, tab)
D²-PAK-7L
FDB Series with suffix -L7
G
(Pin1)
S (Pin2,3,5,6,7)
MOSFET Maximum Ratings T_C = 25^oC unless otherwise noted*
Symbol
Parameter
Ratings
V_DSS
V_GSS
I_D
I_DM
E_AS
dv/dt
P_D
Drain to Source Voltage
Gate to Source Voltage
Drain Current
Drain Current
- Continuous (T_C = 25^oC, Silicon Limited)
- Continuous (T_C = 100^oC, Silicon Limited)
- Continuous (T_C = 25^oC, Package Limited)
- Pulsed
(Note 1)
Single Pulsed Avalanche Energy
(Note 2)
Peak Diode Recovery dv/dt
Power Dissipation
(T_C = 25^oC)
- Derate above 25^oC
(Note 3)
40
±20
219*
155*
100
876
864
6.0
214
1.43
T_J, T_STG
T_L
Operating and Storage Temperature Range
Maximum Lead Temperature for Soldering Purpose,
1/8” from Case for 5 Seconds
-55 to +175
300
*Calculated continuous current based on maximum allowable junction temperature. Package limitation current is 100A.
Thermal Characteristics
Symbol
R_θJC
R_θJA
Parameter
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
Ratings
0.7
62.5
Units
V
V
A
A
mJ
V/ns
W
W/^oC
o_C
o_C
Units
o_C/W
©2010 Fairchild Semiconductor Corporation
1
FDB024N04AL7 Rev. A2
www.fairchildsemi.com