FDA8440 Datasheet, PDF (1/8 Pages) Fairchild Semiconductor – N-Channel PowerTrench® MOSFET

March 2007
FDA8440
tm
N-Channel PowerTrench^® MOSFET
40V, 100A, 2.1mΩ
Features
• R_DS(on) = 1.46mΩ (Typ.)@ V_GS = 10V, I_D = 80A
• Q_g(tot) = 345nC (Typ.)@ V_GS = 10V
• Low Miller Charge
• Low QRR Body Diode
• UIS Capability (Single Pulse and Repetitive Pulse)
• 160A Guarantee for 2 sec
• RoHS Compliant
Application
• Automotive Engine Control
• Powertrain Management
• Motors, Solenoids
• Electronic Steering
• Integrated Starter/ Alternator
• Distributed Power Architectures and VRMs
• Primary Switch for 12V systems
G DS
TO-3PN
MOSFET Maximum Ratings T_C = 25^oC unless otherwise noted
Symbol
V_DSS
V_GSS
I_D
Parameter
Drain to Source Voltage
Gate to Source Voltage
Drain Current
- Continuous (T_C = 145^oC)
- Continuous (T_A = 25^oC, V_GS = 10V, R_θJA = 40^oC/W )
- Pulsed
E_AS
P_D
T_J, T_STG
Single Pulsed Avalanche Energy
Power dissipation
Derate above 25^oC
Operating and Storage Temperature
Thermal Characteristics
R_θJC
R_θJA
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
©2007 Fairchild Semiconductor Corporation
1
FDA8440 Rev. A
D
G
S
(Note 1)
Ratings
40
±20
100
30
500
410
250
1.67
-55 to +175
Units
V
V
A
A
A
mJ
W
mW/^oC
o_C
0.6
(Note 2)
40
o_C/W
o_C/W
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