FDA59N25 Datasheet, PDF (1/8 Pages) Fairchild Semiconductor – 250V N-Channel MOSFET

FDA59N25
250V N-Channel MOSFET
Features
• 59A, 250V, R_DS(on) = 0.049Ω @V_GS = 10 V
• Low gate charge (typical 63 nC)
• Low C_rss (typical 70 pF)
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability
September 2005
UniFET ^TM
V_DS = 250V
V_{DS(Avalanche)} = 300V
R_DS(on) Typ. @10V = 41mΩ
Description
These N-Channel enhancement mode power field effect transis-
tors are produced using Fairchild’s proprietary, planar stripe,
DMOS technology.
This advanced technology has been especially tailored to mini-
mize on-state resistance, provide superior switching perfor-
mance, and withstand high energy pulse in the avalanche and
commutation mode. These devices are well suited for high effi-
cient switched mode power supplies and active power factor
correction.
G DS
TO-3P
FDA Series
Absolute Maximum Ratings
Symbol
V_DSS
V_{DS(Avalanche)}
I_D
I_DM
V_GSS
E_AS
I_AR
E_AR
dv/dt
P_D
T_J, T_STG
T_L
Parameter
Drain-Source Voltage
Repetitive Avalanche Voltage
(Note 1, 2)
Drain Current
Drain Current
- Continuous (T_C = 25°C)
- Continuous (T_C = 100°C)
- Pulsed
(Note 1)
Gate-Source voltage
Single Pulsed Avalanche Energy
(Note 2)
Avalanche Current
(Note 1)
Repetitive Avalanche Energy
(Note 1)
Peak Diode Recovery dv/dt
(Note 3)
Power Dissipation (T_C = 25°C)
- Derate above 25°C
Operating and Storage Temperature Range
Maximum Lead Temperature for Soldering Purpose,
1/8” from Case for 5 Seconds
Thermal Characteristics
Symbol
R_θJC
R_θCS
R_θJA
Parameter
Thermal Resistance, Junction-to-Case
Thermal Resistance, Case-to-Sink
Thermal Resistance, Junction-to-Ambient
D
{
z

G_{
z
z
{
S
FDA59N25
250
300
59
35
236
±30
1458
59
39.2
4.5
392
3.2
-55 to +150
300
Min.
--
0.24
--
Max.
0.32
--
40
Unit
V
V
A
A
A
V
mJ
A
mJ
V/ns
W
W/°C
°C
°C
Unit
°C/W
°C/W
°C/W
©2005 Fairchild Semiconductor Corporation
1
FDA59N25 Rev. A
www.fairchildsemi.com