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FDA50N50_12 Datasheet, PDF (1/8 Pages) Fairchild Semiconductor – 500V N-Channel MOSFET | |||
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FDH50N50_F133 / FDA50N50
500V N-Channel MOSFET
February 2012
UniFETTM
Features
⢠48A, 500V, RDS(on) = 0.105Ω @VGS = 10 V
⢠Low gate charge ( typical 105 nC)
⢠Low Crss ( typical 45 pF)
⢠Fast switching
⢠100% avalanche tested
⢠Improved dv/dt capability
Description
These N-Channel enhancement mode power field effect transis-
tors are produced using Fairchildâs proprietary, planar stripe,
DMOS technology.
This advanced technology has been especially tailored to mini-
mize on-state resistance, provide superior switching perfor-
mance, and withstand high energy pulse in the avalanche and
commutation mode. These devices are well suited for high effi-
cient switched mode power supplies and active power factor
correction.
GD S
TO-247
FDH Series
G DS
TO-3PN
FDA Series
D
{
z
G{
z
z
{
S
Absolute Maximum Ratings
Symbol
VDSS
ID
IDM
VGSS
EAS
IAR
EAR
dv/dt
PD
TJ, TSTG
TL
Parameter
FDH50N50_F133/FDA50N50
Drain-Source Voltage
500
Drain Current
Drain Current
- Continuous (TC = 25°C)
- Continuous (TC = 100°C)
- Pulsed
(Note 1)
48
30.8
192
Gate-Source voltage
±20
Single Pulsed Avalanche Energy
(Note 2)
1868
Avalanche Current
(Note 1)
48
Repetitive Avalanche Energy
(Note 1)
62.5
Peak Diode Recovery dv/dt
(Note 3)
20
Power Dissipation (TC = 25°C)
625
- Derate above 25°C
5
Operating and Storage Temperature Range
-55 to +150
Maximum Lead Temperature for Soldering Purpose,
1/8â from Case for 5 Seconds
300
Thermal Characteristics
Symbol
RθJC
RθCS
RθJA
Parameter
Thermal Resistance, Junction-to-Case
Thermal Resistance, Case-to-Sink
Thermal Resistance, Junction-to-Ambient
Min.
--
0.24
--
Max.
0.2
--
40
Unit
V
A
A
A
V
mJ
A
mJ
V/ns
W
W/°C
°C
°C
Unit
°C/W
°C/W
°C/W
©2012 Fairchild Semiconductor Corporation
1
FDH50N50_F133 / FDA50N50 Rev.C0
www.fairchildsemi.com
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