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FDA2712 Datasheet, PDF (1/8 Pages) Fairchild Semiconductor – N-Channel UltraFET Trench MOSFET 250V, 64A, 34mΩ | |||
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FDA2712
N-Channel UltraFET Trench MOSFET
250V, 64A, 34mΩ
April 2007
UltraFET
tm
Features
⢠RDS(on) = 29.2mΩ @VGS = 10 V, ID = 40A
⢠Fast switching speed
⢠Low gate charge
⢠High performance trench technology for extremely low RDS(on)
⢠High power and current handling capability
⢠RoHS compliant
Description
This N-Channel MOSFET is produced using Fairchild Semicon-
ductorâs advanced PowerTrench process that has been especial-
ly tailored to minimize the on-state resistance and yet maintain
superior switching performance.
Applications
⢠PDP application
D
GDS
TO-3PN
MOSFET Maximum Ratings
Symbol
VDSS
VGSS
ID
IDM
EAS
dv/dt
PD
TJ, TSTG
TL
Parameter
Drain to Source Voltage
Gate to Source Voltage
Drain Current
Drain Current
-Continuous (TC = 25oC)
-Continuous (TC = 100oC)
- Pulsed
Single Pulsed Avalanche Energy
Peak Diode Recovery dv/dt
Power Dissipation
(TC = 25oC)
- Derate above 25oC
Operating and Storage Temperature Range
Maximum Lead Temperature for Soldering Purpose,
1/8â from Case for 5 Seconds
Thermal Characteristics
Symbol
RθJC
RθJA
Parameter
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
G
S
(Note 1)
(Note 2)
(Note 3)
Ratings
250
±30
64
44
240
245
4.5
357
2.85
-55 to +150
300
Ratings
0.35
40
Units
V
V
A
A
mJ
V/ns
W
W/oC
oC
oC
Units
oC/W
©2007 Fairchild Semiconductor Corporation
1
FDA2712 Rev. A
www.fairchildsemi.com
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