FCU900N60Z Datasheet, PDF (1/9 Pages) Fairchild Semiconductor – 600V N-Channel MOSFET

FCU900N60Z
600V N-Channel MOSFET
Features
• 675V @T_J = 150^oC
• Max. R_DS(on) = 900mΩ
• Ultra Low Gate Charge (Typ. Q_g = 13nC)
• Low Effective Output Capacitance (Typ. C_oss.eff = 49pF)
• 100% Avalanche Tested
• ESD Improved Capacity
August 2012
SuperFET^® II
Description
SuperFET^®II is, Fairchild’s proprietary, new generation of high
voltage MOSFET family that is utilizing an advanced charge
balance mechanism for outstanding low on-resistance and lower
gate charge performance.
This advanced technology has been tailored to minimize
conduction loss, provide superior switching performance, and
withstand extreme dv/dt rate and higher avalanche energy.
Consequently, SuperFET^®II is very suitable for various AC/DC
power conversion in switching mode operation for system
miniaturization and higher efficiency.
D
I-PAK
MOSFET Maximum Ratings T_C = 25^oC unless otherwise noted*
Symbol
V_DSS
V_GSS
I_D
I_DM
E_AS
I_AR
E_AR
dv/dt
P_D
T_J, T_STG
T_L
Parameter
Drain to Source Voltage
Gate to Source Voltage
Drain Current
Drain Current
-DC
-AC
-Continuous (T_C = 25^oC)
-Continuous (T_C = 100^oC)
- Pulsed
Single Pulsed Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
MOSFET dv/dt
Power Dissipation
(T_C = 25^oC)
- Derate above 25^oC
Operating and Storage Temperature Range
Maximum Lead Temperature for Soldering Purpose,
1/8” from Case for 5 Seconds
G
S
(f>1Hz)
(Note 1)
(Note 2)
(Note 1)
(Note 1)
(Note 3)
Rating
600
±20
±30
4.5
2.8
13.5
47.5
1
0.52
20
100
52
0.42
-55 to +150
300
Units
V
V
A
A
mJ
A
mJ
V/ns
W
W/^oC
o_C
o_C
Thermal Characteristics
Symbol
R_θJC
R_θJA
Parameter
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
©2012 Fairchild Semiconductor Corporation
1
FCU900N60Z Rev. C0
Rating
2.4
100
Units
o_C/W
www.fairchildsemi.com