FCPF400N60 Datasheet, PDF (1/9 Pages) Fairchild Semiconductor – 600V N-Channel MOSFET

FCPF400N60
600V N-Channel MOSFET
Features
• 650V @T_J = 150°C
• Max. R_DS(on) = 400mΩ
• Ultra low gate charge (typ. Q_g = 28nC)
• Low effective output capacitance (typ. C_oss.eff = 90pF)
• 100% avalanche tested
March 2012
SuperFET^® II
Description
SuperFET^®II is, Fairchild’s proprietary, new generation of high
voltage MOSFET family that is utilizing an advanced charge bal-
ance mechanism for outstanding low on-resistance and lower
gate charge performance.
This advanced technology has been tailored to minimize con-
duction loss, provide superior switching performance, and with-
stand extreme dv/dt rate and higher avalanche energy.
Consequently, SuperFET^®II is very suitable for various AC/DC
power conversion in switching mode operation for system minia-
turization and higher efficiency.
D
GD S
TO-220F
Absolute Maximum Ratings T_C = 25^oC unless otherwise noted
Symbol
V_DSS
V_GSS
I_D
I_DM
E_AS
I_AR
E_AR
dv/dt
P_D
Parameter
Drain to Source Voltage
Gate to Source Voltage
Drain Current
Drain Current
-DC
-AC
-Continuous (T_C = 25^oC)
-Continuous (T_C = 100^oC)
- Pulsed
Single Pulsed Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
MOSFET dv/dt
Power Dissipation
(T_C = 25^oC)
- Derate above 25^oC
T_J, T_STG
T_L
Operating and Storage Temperature Range
Maximum Lead Temperature for Soldering Purpose,
1/8” from Case for 5 Seconds
*Drain current limited by maximum junction temperature
Thermal Characteristics
Symbol
R_θJC
R_θCS
R_θJA
Parameter
Thermal Resistance, Junction to Case
Thermal Resistance, Case to Heat Sink (Typical)
Thermal Resistance, Junction to Ambient
©2012 Fairchild Semiconductor Corporation
1
FCPF400N60 Rev. C2
G
(f>1HZ)
(Note 1)
(Note 2)
(Note 1)
(Note 1)
(Note 3)
S
FCPF400N60
600
±20
±30
10*
6.3*
30*
211.6
2.3
1.06
20
100
31
0.25
-55 to +150
300
Units
V
V
A
A
mJ
A
mJ
V/ns
W
W/^oC
o_C
o_C
FCPF400N60
4
0.5
62.5
Units
o_C/W
www.fairchildsemi.com