FCPF380N60_F152-ND Datasheet, PDF (1/10 Pages) Fairchild Semiconductor – FCP380N60 / FCPF380N60 N-Channel SuperFET II MOSFET 600 V, 10.2 A, 380 mΩ

FCP380N60 / FCPF380N60
N-Channel SuperFET^® II MOSFET
600 V, 10.2 A, 380 mΩ
November 2013
Features
• 650 V @ T_J = 150°C
• Typ. R_DS(on) = 330 mΩ
• Ultra Low Gate Charge (Typ. Q_g = 30 nC)
• Low Effective Output Capacitance (Typ. C_oss(eff.) = 95 pF)
• 100% Avalanche Tested
• RoHS Compliant
Applications
• LCD / LED / PDP TV Lighting
• Solar Inverter
• AC-DC Power Supply
Description
SuperFET^® II MOSFET is Fairchild Semiconductor’s brand-new
high voltage super-junction (SJ) MOSFET family that is utilizing
charge balance technology for outstanding low on-resistance
and lower gate charge performance. This technology is tailored
to minimize conduction loss, provide superior switching
performance, dv/dt rate and higher avalanche energy.
Consequently, SuperFET II MOSFET is very suitable for the
switching power applications such as PFC, server/telecom
power, FPD TV power, ATX power and industrial power
applications.
D
GDS
TO-220
G
GDS
TO-220F
Absolute Maximum Ratings T_C = 25^oC unless otherwise noted.
Symbol
Parameter
V_DSS
V_GSS
I_D
I_DM
E_AS
I_AR
E_AR
dv/dt
P_D
Drain to Source Voltage
Gate to Source Voltage
Drain Current
Drain Current
- DC
- AC
- Continuous (T_C = 25^oC)
- Continuous (T_C = 100^oC)
- Pulsed
Single Pulsed Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
MOSFET dv/dt
Peak Diode Recovery dv/dt
Power Dissipation
(T_C = 25^oC)
- Derate Above 25^oC
(f > 1 Hz)
(Note 1)
(Note 2)
(Note 1)
(Note 1)
(Note 3)
T_J, T_STG Operating and Storage Temperature Range
T_L
Maximum Lead Temperature for Soldering, 1/8” from Case for 5 Seconds
*Drain current limited by maximum junction temperature.
S
FCP380N60 FCPF380N60
600
±20
±30
10.2
10.2*
6.4
6.4*
30.6
30.6*
211.6
2.3
1.06
100
20
106
31
0.85
0.25
-55 to +150
300
Thermal Characteristics
Symbol
R_θJC
R_θJA
Parameter
Thermal Resistance, Junction to Case, Max.
Thermal Resistance, Junction to Ambient, Max.
FCP380N60
1.18
62.5
FCPF380N60
4
62.5
Unit
V
V
A
A
mJ
A
mJ
V/ns
W
W/^oC
o_C
o_C
Unit
o_C/W
©2012 Fairchild Semiconductor Corporation
1
FCP380N60 / FCPF380N60 Rev. C6
www.fairchildsemi.com