FCPF190N60_F152-ND Datasheet, PDF (1/10 Pages) Fairchild Semiconductor – FCP190N60 / FCPF190N60 N-Channel SuperFET II MOSFET 600 V, 20.2 A, 199 mΩ

FCP190N60 / FCPF190N60
N-Channel SuperFET^® II MOSFET
600 V, 20.2 A, 199 mΩ
December 2013
Features
• 650 V @ T_J = 150°C
• Typ. R_DS(on) = 170 mΩ
• Ultra Low Gate Charge (Typ. Q_g = 57 nC)
• Low Effective Output Capacitance (Typ. C_oss(eff.) = 160 pF)
• 100% Avalanche Tested
• RoHS Compliant
Applications
• LCD / LED / PDP TV Lighting
• Solar Inverter
• AC-DC Power Supply
Description
SuperFET^® II MOSFET is Fairchild Semiconductor’s brand-new
high voltage super-junction (SJ) MOSFET family that is utilizing
charge balance technology for outstanding low on-resistance
and lower gate charge performance. This technology is tailored
to minimize conduction loss, provide superior switching perfor-
mance, dv/dt rate and higher avalanche energy. Consequently,
SuperFET II MOSFET is very suitable for the switching power
applications such as PFC, server/telecom power, FPD TV
power, ATX power and industrial power applications.
D
GDS
TO-220
G
GDS
TO-220F
Absolute Maximum Ratings T_C = 25^oC unless otherwise noted.
Symbol
Parameter
V_DSS
V_GSS
I_D
I_DM
E_AS
I_AR
E_AR
dv/dt
P_D
Drain to Source Voltage
Gate to Source Voltage
Drain Current
Drain Current
- DC
- AC
- Continuous (T_C = 25^oC)
- Continuous (T_C = 100^oC)
- Pulsed
Single Pulsed Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
MOSFET dv/dt
Peak Diode Recovery dv/dt
Power Dissipation
(T_C = 25^oC)
- Derate Above 25^oC
(f > 1 Hz)
(Note 1)
(Note 2)
(Note 1)
(Note 1)
(Note 3)
T_J, T_STG
T_L
Operating and Storage Temperature Range
Maximum Lead Temperature for Soldering, 1/8” from Case for 5 Seconds
*Drain current limited by maximum junction temperature.
S
FCP190N60 FCPF190N60
600
±20
±30
20.2
20.2*
12.7
12.7*
60.6
60.6*
400
4.0
2.1
100
20
208
39
1.67
0.31
-55 to +150
300
Thermal Characteristics
Symbol
R_θJC
R_θJA
Parameter
Thermal Resistance, Junction to Case, Max.
Thermal Resistance, Junction to Ambient, Max.
FCP190N60
0.6
62.5
FCPF190N60
3.2
62.5
Unit
V
V
A
A
mJ
A
mJ
V/ns
W
W/^oC
o_C
o_C
Unit
o_C/W
©2012 Fairchild Semiconductor Corporation
1
FCP190N60 / FCPF190N60 Rev. C16
www.fairchildsemi.com