FCPF190N60E-ND Datasheet, PDF (1/10 Pages) Fairchild Semiconductor – FCP190N60E / FCPF190N60E N-Channel SuperFET II Easy-Drive MOSFET 600 V, 20.6 A, 190 mΩ

FCP190N60E / FCPF190N60E
N-Channel SuperFET^® II Easy-Drive MOSFET
600 V, 20.6 A, 190 mΩ
December 2013
Features
• 650 V @ T_J = 150°C
• Typ. R_DS(on) = 160 mΩ
• Ultra Low Gate Charge (Typ. Q_g = 63 nC)
• Low Effective Output Capacitance (Typ. C_oss(eff.) = 178 pF)
• 100% Avalanche Tested
• An Integrated Gate Resistor
• RoHS Compliant
Applications
• LCD / LED / PDP TV Lighting
• Solar Inverter
• AC-DC Power Supply
Description
SuperFET^® II MOSFET is Fairchild Semiconductor’s brand-new
high voltage super-junction (SJ) MOSFET family that is utilizing
charge balance technology for outstanding low on-resistance
and lower gate charge performance. This technology is tailored
to minimize conduction loss, provide superior switching perfor-
mance, dv/dt rate and higher avalanche energy. Consequently,
SuperFET II MOSFET easy-drive series offers slightly slower
rise and fall times compared to the SuperFET II MOSFET
series. Noted by the "E" part number suffix, this family helps
manage EMI issues and allows for easier design implementa-
tion. For faster switching in applications where switching losses
must be at an absolute minimum, please consider the Super-
FET II MOSFET series.
D
GDS
TO-220
G
GDS
TO-220F
MOSFET Maximum Ratings T_C = 25^oC unless otherwise noted.
Symbol
Parameter
V_DSS
V_GSS
I_D
I_DM
E_AS
I_AR
E_AR
dv/dt
P_D
Drain to Source Voltage
Gate to Source Voltage
Drain Current
Drain Current
- DC
- AC
- Continuous (T_C = 25^oC)
- Continuous (T_C = 100^oC)
- Pulsed
Single Pulsed Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
MOSFET dv/dt
Peak Diode Recovery dv/dt
Power Dissipation
(T_C = 25^oC)
- Derate Above 25^oC
(f > 1 Hz)
(Note 1)
(Note 2)
(Note 1)
(Note 1)
(Note 3)
T_J, T_STG Operating and Storage Temperature Range
T_L
Maximum Lead Temperature for Soldering, 1/8” from Case for 5 Seconds
*Drain current limited by maximum junction temperature.
Thermal Characteristics
S
FCP190N60E FCPF190N60E
600
±20
±30
20.6
20.6*
13.1
13.1*
61.8
61.8*
400
4.0
2.1
100
20
208
39
1.67
0.31
-55 to +150
300
Unit
V
V
V
A
A
mJ
A
mJ
V/ns
W
W/^oC
o_C
o_C
Symbol
R_θJC
R_θJA
Parameter
Thermal Resistance, Junction to Case, Max.
Thermal Resistance, Junction to Ambient, Max.
FCP190N60E
0.6
62.5
FCPF190N60E
3.2
62.5
Unit
o_C/W
©2011 Fairchild Semiconductor Corporation
1
FCP190N60E / FCPF190N60E Rev. C10
www.fairchildsemi.com