FCPF11N60 Datasheet, PDF (1/10 Pages) Fairchild Semiconductor – SuperFET

FCP11N60/FCPF11N60
SuperFET^TM
General Description
SuperFET^TM is a new generation of high voltage MOSFETs
from Fairchild with outstanding low on-resistance and low
gate charge performance, a result of proprietary technology
utilizing advanced charge balance mechanisms.
This advanced technology has been tailored to minimize
conduction loss, provide superior switching performance,
and withstand extreme dv/dt rate and higher avalanche
energy. Consequently, SuperFET is very suitable for
various AC/DC power conversion in switching mode
operation for system miniaturization and higher efficiency.
Features
• 650V @T_j = 150°C
• Typ. Rds(on)=0.32Ω
• Ultra low gate charge (typ. Qg=40nC)
• Low effective output capacitance (typ. Coss.eff=95pF)
• 100% avalanche tested
D
!
GDS
TO-220
FCP Series
GD S
TO-220F
FCPF Series
G!
●
◀▲
●
●
!
S
Absolute Maximum Ratings T_C = 25°C unless otherwise noted
Symbol
Parameter
I_D
Drain Current - Continuous (T_C = 25°C)
- Continuous (T_C = 100°C)
I_DM
Drain Current - Pulsed
(Note 1)
V_GSS
Gate-Source Voltage
E_AS
Single Pulsed Avalanche Energy
(Note 2)
I_AR
Avalanche Current
(Note 1)
E_AR
Repetitive Avalanche Energy
(Note 1)
dv/dt
Peak Diode Recovery dv/dt
(Note 3)
P_D
Power Dissipation (T_C = 25°C)
- Derate above 25°C
T_J, T_STG
Operating and Storage Temperature Range
T_L
Maximum lead temperature for soldering purposes,
1/8" from case for 5 seconds
* Drain current limited by maximum junction termperature
FCP11N60 FCPF11N60
11
11*
7
7*
33
33*
± 30
340
11
12.5
4.5
125
36
1.0
0.29
-55 to +150
300
Units
A
A
A
V
mJ
A
mJ
V/ns
W
W/°C
°C
°C
Thermal Characteristics
Symbol
R_θJC
R_θCS
R_θJA
Parameter
Thermal Resistance, Junction-to-Case
Thermal Resistance, Case-to-Sink
Thermal Resistance, Junction-to-Ambient
FCP11N60
1.0
0.5
62.5
FCPF11N60
3.5
--
62.5
Units
°C/W
°C/W
°C/W
©2004 Fairchild Semiconductor Corporation
Rev. B, March 2004